Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 120 V collector-emitter voltage VCEO 120 V emitter-base voltage VEBO 5 V IC 2 A ICP 3 A *1 0.5 W *2 2 W collector current CollectorPower Dissipation PC Junotion Temperature TJ 150 storage Temperature Tstg -55 to 150 *1 Single pulse pw=10ms *2 When mounted on a 40X40X0.7 mm ceramic board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 120 V collector-emitter breakdown voltage BVCEO IC=1mA 120 V Emitter-base breakdown voltage BVEBO IE=50ìA 5 V Collector cutoff current Emitter out current Emitter-emitter saturation voltage ICBO VCB=100V IEBO VEB=4V IC/IB=1A/0.1A VCE(sat) DC current transfer ratio VCE/IC=5V/0.1A hFE Transition frequency fT Output capacitance Cob 82 1 ìA 1 ìA 0.4 V 390 VCE=5V.IE=-0.1A,f=30MHz 80 MHz VCB=10V,IE=0A,f=1MHz 20 pF hFE Classification TYPE CBP CBQ CBR Rank P Q R Marking 82 to 180 120 to 270 180 to390 www.kexin.com.cn 1