KEXIN 2SD2351

Transistors
IC
SMD Type
General Purpose Transistor
2SD2351
Features
High DC current gain.
High emitter-base voltage. (VCBO=12V)
Low saturation voltage.
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
Collector current
IC
12
V
0.15
A(DC)
0.2
A(Pulse)*
W
Collector power dissipation
PC
0.2
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=10ìA
60
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
50
V
Emitter-base breakdown voltage
BVEBO
IE=10ìA
12
V
Collector cutoff current
ICBO
VCB=50V
0.3
ìA
Emitter cutoff current
IEBO
VEB=12V
0.3
ìA
0.3
V
VCE(sat) IC/IB=50mA/5mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE/IC=5V/1mA
820
2700
VCE=5V, IE=-10mA, f=100MHz
250
MHz
VCB=5V, IE=0A, f=1MHz
3.5
pF
hFE Classification
Marking
BJV
BJW
hFE
820 1800
1200 2700
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