Transistors IC SMD Type General Purpose Transistor 2SD2226K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 Low saturation voltage. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 12 V Collector current 0.15 IC A 0.2 * Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 W * Single pulse Pw=100ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=10ìA 60 V Collector-emitter breakdown voltage BVCEO IC=1mA 50 V Emitter-base breakdown voltage BVEBO IE=10ìA 12 V ICBO VCB=50V 0.3 ìA IEBO VEB=12V 0.3 ìA 0.3 V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage * VCE(sat) IC/IB=50mA/5mA DC current transfer ratio * hFE Output capacitance * fT Transition frequency Cob VCE=5V, IC=1mA 820 2700 VCE=5V, IE= -10mA, f=100MHz 250 MHz VCB=5V, IE=0, f=1MHz 3.5 pF * Measured using pulse current. hFE Classification BJ Marking Rank V W hFE 820 1800 1200 2700 www.kexin.com.cn 1