KEXIN 2SD1048

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistors
2SD1048
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
Large current capacity (IC=0.7A) and low-saturation voltage.
+0.1
1.3-0.1
+0.1
2.4-0.1
Ultrasmall package allows miniaturization in end products.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.7
A
Collector current (pulse)
ICP
1.5
A
Collector dissipation
PC
200
mW
Jumction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = 15V , IE = 0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
0.1
ìA
DC current Gain
hFE
VCE = 2V , IC = 50mA
fT
VCE = 10V , IC = 50mA
250
MHz
Cob
VCB = 10V , f = 1MHz
8
pF
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Testconditons
Min
Typ
200
900
VCE(sat) IC = 5mA , IB = 0.5mA
10
25
mV
VCE(sat) IC = 100mA , IB = 10mA
30
80
mV
hFE Classification
Marking
hFE
X6
200
400
X7
300
600
X8
450
900
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