KEXIN KRF8910

IC
IC
SMD Type
HEXFET Power MOSFET
KRF8910
Features
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Drain- Source Voltage
Parameter
VDS
20
Gate-to-Source Voltage
VGS
ID
10
Continuous Drain Current,VGS @ 10V TC = 70
ID
8.3
Pulsed Drain Current *1
IDM
82
PD
Linear Derating Factor
Junction-to-Drain Lead
2
A
W
1.3
Maximum Power Dissipation Ta = 70
Operating Junction and Storage Temperature Range
V
20
Continuous Drain Current, VGS @ 10V Ta = 25
Maximum Power Dissipation Ta = 25
Unit
0.016
TJ,TSTG
R
JL
-55 to + 150
20
/W
62.5
/W
Maximum Junction-to-Ambient *2,3
R JA
Single Pulse Avalanche Energy *4
EAS
19
mJ
Avalanche Current *1
IAR
8.2
A
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 when
*3 R
mounted on 1 inch square copper board.
is measured at TJ of approxmately 90
*4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A.
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IC
IC
SMD Type
KRF8910
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
VGS = 0V, ID = 250A
BVDSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
TJ
Min
Typ
Max
20
V
ID = 1mA,Reference to 25
0.015
VGS = 10V, ID = 10A*1
10.7
13.4
VGS = 4.5V, ID = 8.0A*1
14.6
18.3
VGS(th)
Unit
1.65
V/
2.55
V
VDS = VGS, ID = 250 A
Gate Threshold Voltage Coefficient
VGS(th)/
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Forward Transconductance
gfs
-4.8
TJ
VDS = 16V, VGS = 0V
1.0
VDS = 16V, VGS = 0V, TJ = 125
150
VGS = 20V
100
VGS = -20V
-100
VDS = 10V, ID = 8.2A
24
Qg
7.4
Qgs1
2.4
Post-Vth Gate-to-Source Charge
Qgs2
Gate-to-Drain Charge
Qgd
2.5
Qgodr
1.7
Qsw
3.3
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Qoss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
Fall Time
ID = 8.2A,VGS = 4.5V,VDS = 10V
VDS = 10V, VGS = 0V
11
nC
4.4
6.2
VDD = 10V, VGS = 4.5V,ID = 8.2A
10
td(off)
9.7
tf
4.1
Ciss
VGS = 0V
960
Output Capacitance
Coss
VDS = 10V
300
Reverse Transfer Capacitance
Crss
f = 1.0MHz
160
Body Diode)
nA
0.80
Input Capacitance
Continuous Source Current
A
S
Pre-Vth Gate-to-Source Charge
Total Gate Charge
mV/
ns
pF
IS
2.5
ISM
82
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
1.0
V
ns
Reverse Recovery Time
trr
TJ = 25 , IF =8.2A,VDD=10V
17
26
Reverse RecoveryCharge
Qrr
di/dt = 100A/
6.5
9.7
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
TJ = 25 , IS = 8.2A, VGS = 0V*1
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