KEXIN FMMT4400

Transistors
IC
SMD Type
General Purpose Transistors
FMMT4400
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
General purpose transistors.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
600
mA
Power dissipation
Ptot
330
mW
Tj,Tstg
-55 to +150
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA
6
Collector-emitter cut-off current
ICEX
Base cut-off current
IBEX
DC current gain *
hFE
IC=150mA, VCE=1V
VCE=35V VEB(off) =0.4V
ìA
VCE=35V VEB(off) =3V
0.1
ìA
Collector-emitter saturation voltage *
IC=150mA,IB=15mA
VCE(sat)
IC=500mA,IB=50mA
Base-emitter saturation voltage *
VBE(sat)
Current-gain-bandwidth product
fT
Output capacitance
Cobo
Input capacitance
Cibo
V
0.1
50
IC=150mA,IB=15mA
IC=500mA,IB=50mA
0.75
IC=20mA, VCE=10V f=100KHz
200
150
0.4
0.75
V
0.95
1.2
V
MHz
VCB=5V, IE=0, f=100KHz
6.5
pF
VBE=0.5V, IC=0, f=100KHz
30
pF
Delay time
ton
VCC=30V, IC=150mA,IB1=15mA
VBE(off)=2V
35
ns
Storage time
toff
VCC=30V, IC=150mA
IB1= IB2=15mA
255
ns
* Pulse test: tp
300 ìs; d
0.02.
Marking
Marking
1KZ
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