Transistors IC SMD Type General Purpose Transistor MMBTA70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 General Purpose Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -4 V Collector current IC -100 mA Total Device Dissipation FR-5 Board (* 1) @TA = 25 Derate above 25 PD 225 1.8 mW mW/ RèJA 556 /W 300 2.4 mW mW/ 417 /W Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) @TA = 25 Derate above 25 PD Thermal Resistance, Junction-to-Ambient RèJA Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * 1. FR-5 = 1.0 × 0.75 × 0.062 in. * 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = -1.0 mA, IB = 0 -40 V Emitter-base breakdown voltage V(BR)EBO IE = -100 ìA, IC = 0 -4.0 V Collector cutoff current ICBO VCB = -30 V, IE = 0 DC current gain HFE IC = -5.0 mA, VCE = -10 V VCE(sat) IC = -10 mA, IB = -1.0 mA Collector-emitter saturation voltage Current-gain-bandwidth product Output capacitance fT Cobo IC = -5.0 mA, VCE = -10 V, f = 100 MHz VCB = -10 V, IE = 0, f = 1.0 MHz -100 40 nA 400 -0.25 125 V MHz 4.0 pF Marking Marking M2C www.kexin.com.cn 1