Transistors IC SMD Type General Purpose Transistor MMBT2222AW Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Device Dissipation FR-5 Board PD 150 mW RèJA 833 /W Thermal Resistance, Junction-to-Ambient Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type MMBT2222AW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = 1.0 mA, IB = 0 40 V Collector-base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 75 V Emitter-base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 6 V Base cutoff current IBL VCE = 60 V, VEB = 3.0 V Collector cutoff current ICEX VCE = 60 V, VEB = 3.0 V DC current gain * HFE IC = 150 mA, VCE = 10 V Collector-emitter saturation voltage * VCE(sat) 100 IC = 150 mA, IB = 15 mA Base-emitter saturation voltage * VBE(sat) IC = 150 mA, IB = 15 mA fT IC = 20 mA, VCE = 20 V, f = 100 MHz nA 10 nA 300 1.0 0.6 IC = 500 mA, IB = 50 mA Current-gain-bandwidth product 20 0.3 IC = 500 mA, IB = 50 mA V 1.2 2.0 300 MHz Output capacitance Cobo VCB = 10 V, IE = 0, f = 1.0 MHz 8.0 pF Input capacitance Cibo VEB = 0.5 V, IC = 0, f = 1.0 MHz 30 pF Input impedance hie VCE = 10 V, IC = 10 mA, f = 1.0 kHz 1.25 kÙ Voltage feedback ratio hre VCE = 10 V, IC = 10 mA, f = 1.0 kHz 4.0 X10-4 Small-sgnal current gain hfe VCE = 10 V, IC = 10 mA, f = 1.0 kHz 75 375 Output admittance hoe VCE = 10 V, IC = 10 mA, f = 1.0 kHz 25 200 ìmhos Noise figure NF VCE = 10 V, IC = 100 ìA, RS = 1.0 kÙ, f = 1.0 kHz Delay time td 0.25 4.0 dB 10 ns Rise time tr VCC = 3.0 V, VBE = -0.5 V, IC = 150 mA, IB1 = 15 mA 25 ns Storage time ts VCC = 30 V, IC = 150 mA, 225 ns Fall time tf IB1 = IB2 = 15 mA 60 ns 300 ìs, duty cycle * Pulse test: pulse width Marking Marking 2 Typ P1 www.kexin.com.cn 2.0%.