Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 1 E1 4 E2 2 B1 5 B2 3 C2 6 C1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V IC 100 mA Collector Current Total Device Dissipation 300 PD 2.4 Derate above 25 Thermal Resistance, Junction to Ambient R TJ, Tstg Operating and Storage Junction Temperature Range 415 JA mW mW/ /W -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC = 10 Collector-Emitter Breakdown Voltage VCEO IC = 10 mA, IB = 0 45 V Emitter-Base Breakdown Voltage VEBO IE = 10 6.0 V Collector-Cutoff Current ICBO DC Current Gain hFE A, IE = 0 A, IC = 0 50 V VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 Collector-Emitter Saturation Voltage VCE(sat) IC = 2.0 mA, VCE = 5.0 V 110 VBE(on) 0.58 IC = 10 mA, VCE = 5.0 V Output Capacitance Cob Transistion frequency fT 5.0 A 0.25 IC = 100 mA, IB = 5.0 mA Base-Emitter ON Voltage nA 630 IC = 10 mA, IB = 0.5 mA IC = 2.0 mA, VCE = 5.0 V 15 V 0.65 V 0.7 V 0.77 V VCB = 10 V, f = 1.0 MHz 2.0 pF IC = 20 mA, VCE = 5.0,f = 100 mHz 200 MHz Marking Marking 1C www.kexin.com.cn 1