Transistors SMD Type PNP Transistors MMBT6520 (KMBT6520) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 0.55 ● High Voltage Transistor +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● Collector-Emitter Voltage: VCEO= -350V 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 +0.2 1.1 -0.1 3 COLLECTOR 1 BASE 1. Base 0-0.1 2 EMITTER +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -350 Collector - Emitter Voltage VCEO -350 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 Base Current IB -250 Total Device Dissipation FR– 5 Board (Note.1) PD 225 mW 1.8 mW/℃ 300 mW 2.4 mW/℃ Derate above 25 °C Total Device Dissipation Alumina Substrate (Note.2) PD Derate above 25 °C Thermal Resistance, Junction to Ambient (Note.1) (Note.2) Junction Temperature Storage Temperature range RθJA 556 417 TJ 150 Tstg -55 to 150 Unit V mA ℃/W ℃ Note.1: FR–5 = 1.0 x 0.75 x 0.062 in. Note.2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. www.kexin.com.cn 1 Transistors SMD Type PNP Transistors MMBT6520 (KMBT6520) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -350 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -350 Typ Max -5 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 ICBO VCB= -250 V , IE=0 -50 Emitter cut-off current IEBO VEB= -4V , IC=0 -50 VCE(sat) IC=-10 mA, IB=-1mA -0.3 IC=-20 mA, IB=-2mA -0.35 IC=-30 mA, IB=-3mA -0.5 IC=-50 mA, IB=-5mA -1 IC=-10 mA, IB=-1mA -0.75 Base - emitter saturation voltage VBE(sat) IC=-20 mA, IB=-2mA -0.85 IC=-30 mA, IB=-3mA -0.9 Base-Emitter On Voltage VBE(on) VCE= -10V, IC= -100mA DC current gain hFE VCE= -10V, IC= -1mA 20 VCE=- 10V, IC= -10mA 30 VCE=- 10V, IC= -30mA 30 200 VCE=- 10V, IC= -50mA 20 200 VCE=- 10V, IC= -100mA 15 Ceb VEB= -0.5V, IC= 0,f=1MHz 100 Collector output capacitance Cob VCB= -20V, IE= 0,f=1MHz 6 ■ Marking Marking 2Z www.kexin.com.cn fT VCE= -20V, IC= -10mA,f=20MHz nA V -2 Emitter-base capacitance Transition frequency Unit V Collector-base cut-off current Collector-emitter saturation voltage 2 Test Conditions 40 200 pF MHz Transistors SMD Type PNP Transistors MMBT6520 (KMBT6520) ■ Typical Characterisitics www.kexin.com.cn 3 Transistors SMD Type PNP Transistors MMBT6520 ■ Typical Characterisitics . 4 www.kexin.com.cn (KMBT6520)