SAVANTIC 2SB855

SavantIC Semiconductor
Product Specification
2SB855
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
APPLICATIONS
·Low frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-4
V
-2
A
20
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-45~150
TC=25
SavantIC Semiconductor
Product Specification
2SB855
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=6
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-50
V
V(BR)EBO
Emitter-base breakdown votage
IE=-5mA; IC=0
-4
V
Collector-emitter saturation voltage
IC=-2 A;IB=-0.2 A
-1.2
V
VBE
Base-emitter voltage
IC=-1A ; VCE=-4V
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-100
µA
hFE-1
DC current gain
IC=-1A ; VCE=-4V
35
hFE-2
DC current gain
IC=-0.1A ; VCE=-4V
35
Transition frequency
IC=-0.5A ; VCE=-4V
VCEsat
fT
CONDITIONS
hFE-1 classifications
A
B
C
35-70
60-120
100-200
2
MIN
TYP.
MAX
UNIT
200
35
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SB855