VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 600 3×103 1.9 3.5 2800 V A A V mW V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Doc. No. 5SYA1236-00 Jun. 04 · Patented free-floating silicon technology · Low on-state and switching losses · Central gate electrode · Industry standard housing · Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Symbol Conditions Repetitive peak off-state voltage VDRM Repetitive peak reverse voltage VRRM Permanent DC voltage for 100 FIT failure rate VDclink min typ VGR ³ 2 V Ambient cosmic radiation at sea level in open air. max Unit 4500 V 17 V 2800 V max Unit Characteristic values Parameter Symbol Conditions min typ Repetitive peak off-state current IDRM VD = VDRM, VGR ³ 2 V 20 mA Repetitive peak reverse current IRRM VR = VRRM, RGK = ¥ W 50 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force Fm min typ max Unit 10 11 12 kN min typ max Unit Characteristic values Parameter Symbol Conditions Pole-piece diameter Dp Housing thickness H Weight m Surface creepage distance Ds ± 0.1 mm 34 mm 26 mm 0.25 Anode to Gate 30 Air strike distance Da Anode to Gate 20.5 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. kg mm mm 5SGA 06D4502 GTO Data On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IT(AV)M Max. RMS on-state current IT(RMS) Max. peak non-repetitive surge current ITSM Limiting load integral I2t Max. peak non-repetitive surge current ITSM Limiting load integral I2t Max. peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, TC = 85 °C max Unit 210 A 330 A 3 A 3 A2s 3.1×10 tp = 8.3 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 40×10 3 tp = 10 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 3×10 3 45×10 3 tp = 1 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 6×10 3 A A2s A 18×10 A2s max Unit 4 V Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 600 A, Tvj = 125°C min typ Threshold voltage V(T0) 1.9 V Slope resistance rT Tvj = 125°C IT = 200...600 A 3.5 mW Holding current IH Tvj = 25°C 20 A max Unit 400 A/µs 600 A/µs Turn-on switching Maximum rated values 1) Parameter Symbol Conditions Critical rate of rise of onstate current diT/dtcr Critical rate of rise of onstate current diT/dtcr Min. on-time ton min Tvj = 125°C, IT = 600 A, IGM = 20 A, f = 200 Hz diG/dt = 20 A/µs f = 1 Hz typ 80 µs Characteristic values Parameter Symbol Conditions Turn-on delay time td Rise time tr Turn-on energy per pulse Eon min typ VD = 0.5 VDRM, Tvj = 125 °C IT = 600 A, di/dt = 200 A/µs, IGM = 20 A, diG/dt = 20 A/µs, CS = 1 µF, RS = 10 W max Unit 1.5 µs 3 µs 0.8 J max Unit 600 A £ 650 V Turn-off switching Maximum rated values 1) Parameter Symbol Conditions Max. controllable turn-off current ITGQM VDM £ VDRM, VD = 0.5 VDRM Spike Voltage VDSP diGQ/dt = 20 A/µs, CS = 1 µF, LS £ 0.15 µH, RCD Snubber Min. off-time toff min typ 80 µs Characteristic values Parameter Symbol Conditions Storage time tS Turn-on energy per pulse Eoff VD = 0.5 VDRM, Tvj = 125 °C VDM £ VDRM, diGQ/dt = 20 A/µs, ITGQ = ITGQM, RS = 10 W, CS = 1 µF, LS = 0.15 µH Fall time tf Peak turn-off gate current IGQM RCD Snubber min typ max Unit 15 µs 5 µs 1.9 J 300 A ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1236-00 Jun. 04 page 2 of 5 5SGA 06D4502 Gate Maximum rated values 1) Parameter Symbol Conditions Repetitive peak reverse voltage VGRM Repetitive peak reverse current IGRM min typ max Unit 17 V 20 mA max Unit VGR = VGRM Characteristic values Parameter Symbol Conditions Gate trigger voltage VGT Gate trigger current IGT Thermal Maximum rated values min Tvj = 25°C, VD = 24 V, RA = 0.1 W typ 1 V 2 A 1) Parameter Symbol Conditions min typ max Unit Junction operating temperature Tvj 0 125 °C Storage temperature range Tstg 0 125 °C max Unit Characteristic values Parameter Symbol Thermal resistance junction to case Thermal resistance case to heatsink (Double side cooled) Conditions min typ Rth(jc) Double side cooled 50 K/kW Rth(jc)A Anode side cooled 85 K/kW Rth(jc)C Cathode side cooled 122 K/kW Rth(ch) Single side cooled 16 K/kW Rth(ch) Double side cooled 8 K/kW Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/t i ) i =1 i 1 2 3 4 Ri(K/kW) 15.000 5.200 7.500 0.100 ti(s) 0.4610 0.0950 0.0120 0.0010 Fig. 1 Transient thermal impedance, junction to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1236-00 Jun. 04 page 3 of 5 5SGA 06D4502 Fig. 2 General current and voltage waveforms with GTO-specific symbols. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1236-00 Jun. 04 page 4 of 5 5SGA 06D4502 Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10…15 V. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1236-00 Jun. 04