VSM IT(AV)M IT(RMS) ITSM VT0 rT = = = = = = 5200 V 1980 A 3100 A 42×10 A 1.06 V 0.219 mΩ Ω Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-02 Jul. 03 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Maximum rated values 1) Symbol Conditions 5STB 25U5200 5STB 25U5000 5STB 25U4600 VSM f = 5 Hz, tp = 10 ms 5200 V 5000 V 4600 V VRM f = 50 Hz, tp = 10 ms 4400 V 4200 V 4000 V dV/dtcrit Exp. to 0.67 x VRM, Tvj = 110°C 2000 V/µs Characteristic values Parameter Symbol Conditions min typ Max. leakage current IRM VRM, Tvj = 110°C VRM is equal to the VSM value up to Tj = 95 °C max 400 Unit mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 120 135 max Unit 160 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Surface creepage distance DS min typ max 3.6 53 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Unit kg mm mm 5STB 25U5200 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70°C max Unit 1980 A 3100 tp = 10 ms, Tvj = 110 °C, A 3 A 6 A2s 3 A 6 A2s 42.0×10 VD = VR = 0 V 8.82×10 tp = 8.3 ms, Tvj = 110 °C, 45.0×10 VD = VR = 0 V 8.40×10 Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 3000 A, Tvj = 110 °C 1.7 V Threshold voltage VT0 IT = 1300 A - 4000 A, Tvj= 110 °C 1.06 V Slope resistance rT 0.219 mΩ Holding current IH Tvj = 25 °C 125 mA Tvj = 110 °C 70 mA Tvj = 25 °C 900 mA Tvj = 110 °C 700 mA Latching current IL min typ max Unit Switching Maximum rated values 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit commutated turn-off tq time min Tvj = 110 °C, Cont. ITRM = 3000 A, f = 50 Hz VD ≤ 0.67 VRM, Cont. IFG = A, tr = 0.5 µs f = 1Hz Tvj = 110°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs, VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs, typ max Unit 250 A/µs 1000 A/µs 800 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tvj = 110°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs Delay time td VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs min typ 3600 max Unit 4600 µAs 3 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 2 of 6 5STB 25U5200 Triggering Maximum rated values 1) Parameter Symbol Conditions Peak forward gate voltage VFGM 12 V Max. rated peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V 3 W Max. rated gate power loss PG Max. rated peak forward gate power min typ For DC gate current PGM max Unit see Fig. 9 Characteristic values Parameter Symbol Conditions min typ max Unit Gate trigger voltage VGT Tvj = 25 °C 2.6 V Gate trigger current IGT Tvj = 25 °C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VRM, Tvjmax = 110 °C 0.3 V Gate non-trigger current IGD VD = 0.4 x VRM 10 mA Thermal Maximum rated values 1) Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg typ -40 max Unit 110 °C 140 °C max Unit 8.5 K/kW Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) to case min typ Double-side cooled Rth(j-c)A Anode-side cooled 17 K/kW Rth(j-c)C Cathode-side cooled 17 K/kW Double-side cooled 1.6 K/kW Single-side cooled 3.2 K/kW Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: n Zth(j - c)(t) = ∑ Ri(1 - e- t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 5.748 1.731 0.688 0.333 τi(s) 0.9531 0.1240 0.0144 0.0031 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 3 of 6 5STB 25U5200 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT VT110 = ATvj + BTvj ⋅ IT + CTvj ⋅ ln(IT +1) + DTvj ⋅ IT A25 -6 200.70×10 Valid for IT = 500 – 80000 A B25 C25 D25 -6 -3 -3 116.90×10 176.4×10 -2.52×10 Valid for IT = 500 – 80000 A A110 B110 -6 -6 157.10×10 145.60×10 C110 -3 155.60×10 D110 -6 -27.48×10 Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 4 of 6 5STB 25U5200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1038-02 Jul. 03 page 5 of 6 5STB 25U5200 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1038-02 Jul. 03