VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 2810 A 4410 A 45000 A 1.12 V 0.29 mΩ Ω Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol Conditions 5STP 26N6500 5STP 26N6200 5STP 26N5800 VDSM, VRSM f = 5 Hz, tp = 10ms 6500 V 6200 V 5800 V VDRM, VRRM f = 50 Hz, tp = 10ms 5600 V 5300 V 4900 V VRSM1 tp = 5ms, single pulse 7000 V 6700 V 6300 V dV/dtcrit Exp. to 0.67 x VDRM, Tj = 125°C 2000 V/µs Characteristic values Parameter Symbol Conditions min typ max Unit Forwarde leakage current IDSM VDSM, Tj = 125°C 600 mA Reverse leakage current IRSM VRSM, Tj = 125°C 600 mA VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 81 typ 90 max Unit 108 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Surface creepage distance DS 56 mm Air strike distance Da 22 mm 1) min typ 2.9 Maximum Ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit kg 5STP 26N6500 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current ITAVM RMS on-state current ITRMS Max. peak non-repetitive surge current ITSM Limiting load integral I2t Max. peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70°C tp = 10 ms, Tj = 125°C, VD=VR = 0 V tp = 8.3 ms, Tj = 125°C, VD=VR=0 V max Unit 2810 A 4410 A 45000 A 10125 kA2s 50000 A 10375 kA2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 3000 A, Tj= 125°C Threshold voltage VT0 Slope resistance Holding current Latching current Switching Maximum rated values max Unit 2 V IT = 1300 A - 4000 A, Tj= 125°C 1.12 V rT Tj = 125°C 0.29 mΩ IH Tj = 25°C 125 mA Tj = 125°C 75 mA Tj = 25°C 500 mA Tj = 125°C 250 mA IL min typ 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min typ Cont. Tj = 125°C, ITRM = 3000 A, f = 50 Hz VD ≤ 0.67⋅VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tj = 125°C, ITRM = 3000 A, VR = 200 V, diT/dt = -1 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs, max Unit 200 A/µs 1000 A/µs 800 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tj = 125°C, ITRM = 3000 A, VR = 200 V, diT/dt = -1 A/µs Delay time td VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs min typ 2700 max Unit 3700 µAs 3 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1001-03 Jan. 02 page 2 of 6 5STP 26N6500 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Gate power loss PG 3 W Average gate power loss PGAV For DC gate current max Unit see Fig. 9 Characteristic values Parameter Symbol Conditions Gate trigger voltage VGT Tj = 25°C 2.6 V Gate trigger current IGT Tj = 25°C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125°C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125°C 10 mA Thermal Maximum rated values min typ max Unit 1) Parameter Symbol Conditions Operating junction temperature range Tj min Storage temperature range Tstg typ -40 max Unit 125 °C 140 °C Characteristic values Parameter Symbol Conditions max Unit Double side cooled 5.7 K/kW Rth(j-c)A Anode side cooled 11.4 K/kW Rth(j-c)C Cathode side cooled 11.4 K/kW Double side cooled 1 K/kW Single side cooled 2 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 3.4 1.26 0.68 0.35 τi(s) 0.8685 0.1572 0.0219 0.0078 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1001-03 Jan. 02 page 3 of 6 5STP 26N6500 On-state characteristic model: VT = A + B ⋅ iT + C ⋅ ln(iT +1) + D ⋅ IT Valid for iT = 500 – 8000 A A B C D -4.7752e-1 1.8600e-4 2.6488e-1 -3.8650e-3 Fig. 2 On-state characteristics. Tj=125°C, 10ms half sine Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 3 On-state characteristics. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1001-03 Jan. 02 page 4 of 6 5STP 26N6500 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20µs diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommendet gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1001-03 Jan. 02 page 5 of 6 5STP 26N6500 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abbsem.com Doc. No. 5SYA1001-03 Jan. 02