VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25×103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Symbol Conditions Repetitive peak off-state voltage VDRM Repetitive peak reverse voltage VRRM Permanent DC voltage for 100 FIT failure rate VDC-link min typ VGR ≥ 2 V Ambient cosmic radiation at sea level in open air. max Unit 4500 V 17 V 2800 V max Unit Characteristic values Parameter Symbol Conditions min typ Repetitive peak off-state current IDRM VD = VDRM, VGR ≥ 2 V 100 mA Repetitive peak reverse current IRRM VR = VRRM, RGK = ∞ Ω 50 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force Fm min typ max Unit 36 40 44 kN min typ max Unit Characteristic values Parameter Symbol Conditions Pole-piece diameter Dp Housing thickness H Weight m Surface creepage distance Ds ± 0.1 mm 85 25.6 Anode to Gate 33 Air strike distance Da Anode to Gate 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. mm 26.1 mm 1.5 kg mm mm 5SGA 40L4501 GTO Data On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IT(AV)M Max. RMS on-state current IT(RMS) Max. peak non-repetitive surge current ITSM Limiting load integral I2t Max. peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, TC = 85 °C max Unit 1000 A 1570 A 3 A 6 A2s 3 A 25×10 tp = 10 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 3.1×10 tp = 1 ms, Tvj = 125°C, sine wave After Surge: VD = VR = 0 V 40×10 3 800×10 A2s Characteristic values Parameter Symbol Conditions max Unit On-state voltage VT IT = 4000 A, Tvj = 125°C min typ 4.4 V Threshold voltage V(T0) 2.1 V Slope resistance rT Tvj = 125°C IT = 400...5000 A 0.58 mΩ Holding current IH Tvj = 25°C 100 A max Unit 500 A/µs 1000 A/µs Turn-on switching Maximum rated values 1) Parameter Symbol Conditions Critical rate of rise of onstate current diT/dtcr Critical rate of rise of onstate current diT/dtcr Min. on-time ton Tvj = 125°C, IT = 4000 A, IGM = 50 A, diG/dt = 40 A/µs min typ f = 200 Hz f = 1 Hz VD = 0.5 VDRM, Tvj = 125 °C IT = 4000 A, di/dt = 300 A/µs, IGM = 50 A, diG/dt = 40 A/µs, CS = 6 µF, RS = 5 Ω 100 µs Characteristic values Parameter Symbol Conditions Turn-on delay time td Rise time tr Turn-on energy per pulse Eon min typ VD = 0.5 VDRM, Tvj = 125 °C IT = 4000 A, di/dt = 300 A/µs, IGM = 50 A, diG/dt = 40 A/µs, CS = 6 µF, RS = 5 Ω max Unit 2.5 µs 5 µs 3.3 J max Unit 4000 A Turn-off switching Maximum rated values 1) Parameter Max. controllable turn-off current Min. off-time Symbol Conditions ITGQM toff min typ VDM ≤ VDRM, diGQ/dt = 40 A/µs, CS = 6 µF, LS ≤ 0.3 µH VD = 0.5 VDRM, Tvj = 125 °C VDM ≤ VDRM, diGQ/dt = 40 A/µs, ITGQ = ITGQM, RS = 5 Ω, CS = 6 µF, LS = 0.3 µH 100 µs Characteristic values Parameter Symbol Conditions Storage time tS Fall time tf Turn-on energy per pulse Eoff Peak turn-off gate current IGQM min typ VD = 0.5 VDRM, Tvj = 125 °C VDM ≤ VDRM, diGQ/dt = 40 A/µs, ITGQ = ITGQM, RS = 5 Ω, CS = 6 µF, LS = 0.3 µH max Unit 27 µs 3 µs 14 J 1100 A ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 2 of 9 5SGA 40L4501 Gate Maximum rated values 1) Parameter Symbol Conditions Repetetive peak reverse voltage VGRM Repetetive peak reverse current IGRM min typ max Unit 17 V 50 mA max Unit VGR = VGRM Characteristic values Parameter Symbol Conditions Gate trigger voltage VGT Gate trigger current IGT min Tvj = 25°C, VD = 24 V, RA = 0.1 Ω typ 1.2 V 4 A Thermal Maximum rated values 1) max Unit Junction operating temperature Parameter Symbol Tvj Conditions min -40 typ 125 °C Storage temperature range Tstg -40 125 °C max Unit Characteristic values Parameter Symbol Thermal resistance junction to case Thermal resistance case to heatsink (Double side cooled) Conditions min typ Rth(j-c) Double side cooled 11 K/kW Rth(j-c)A Anode side cooled 20 K/kW Rth(j-c)C Cathode side cooled 25 K/kW Rth(c-h) Single side cooled 6 K/kW Rth(c-h) Double side cooled 3 K/kW Analytical function for transient thermal impedance: n Zth(j - c)(t) = ∑ Ri(1 - e - t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 7.313 1.974 1.218 0.501 τi(s) 0.5400 0.0939 0.0117 0.0036 Fig. 1 Transient thermal impedance, junction to case ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 3 of 9 5SGA 40L4501 Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs. average on-state current Fig. 4 Surge current and fusing integral vs. pulse width ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 4 of 9 5SGA 40L4501 Fig. 5 Forward blocking voltage vs. gate-cathode resistance Fig. 6 Static dv/dt capability; forward blocking voltage vs. neg. gate voltage or gate cathode resistance Fig. 7 Forward gate current vs. forard gate voltage Fig. 8 Gate trigger current vs. junction temperature ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 5 of 9 5SGA 40L4501 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage Fig. 10 Turn-on energy per pulse vs. on-state current and current rise rate Common Test conditions: diG/dt = 40 A/µs CS = 6 µF RS =5Ω Tj = 125 °C Definition of Turn-on energy: 20 µ s E on = ∫V D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM ) 0 Definition of Turn-off energy: E off = 40 µ s ∫V D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ ITGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 6 of 9 5SGA 40L4501 QGQa [A] 18000 Eoff [J] 18 Conditions: VD = ½⋅VDRM di GQ/dt = 40 A/ µs CS = 6 µF, R S = 5 Ω Tj = 125°C 16 14 16000 Eoff [J] 14 12 Conditions: VD = ½ VDRM , VDM = VDRM diGQ /dt =40 A/µs RS = 5 Ω 10 T j = 125 °C 14000 VDM = VDRM 12 12000 10 10000 8 8000 6 8 ¾ VDRM CS = 6µF 6000 6 QGQa 4 ½ VDRM 4 4000 2 2000 2 0 0 0 500 1000 1500 2000 2500 3000 3500 0 4000 0 500 1000 1500 2000 2500 3000 3500 ITGQ [A] Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage, extracted gate charge vs. turn-off current C s [µF] 5 Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance IGQM [A] Eoff [J],ts [µs] 6 Condition: VD = ½⋅VDRM , VDM = VDRM diGQ /dt = 40 A/µs RS = 5 Ω, LS ≤ 300 nH 4 3 22 55 20 50 18 45 900 16 40 800 14 35 12 30 10 25 8 20 6 15 1100 IGQM 1500 2000 2500 3000 3500 4000 4 10 2 5 0 0 -10 0 1000 700 Eoff 500 400 300 Condition: 10 202530 40 50 VD = ½ VDRM , VDM = VDRM ITGQ = 4000 A, diGQ /dt = 40 A/µs Tj = 125 °C 60 707580 IGQM [A] Fig. 14 Required snubber capacitor vs. max allowable turn-off current 200 100 0 90 100 110 120 125 Tj [°C] Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature IGQM [A] ts [s] 60 600 tS 2 1 1000 4000 ITGQ [A] IGQM [A] ts [s] 1200 60 1000 50 1200 55 IGQM 50 1000 IGQM 45 40 800 40 600 30 800 35 tS 30 600 tS 25 20 15 Conditions: ITGQ = 3000 A T j = 125 °C 10 5 0 400 20 200 10 0 0 10 20 30 40 50 60 400 Conditions: diGQ/dt =40 A/µs T j = 125 °C 0 0 500 1000 1500 2000 2500 diGQ /dt [A/µs] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate 3000 3500 200 0 4000 ITGQ [A] Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 7 of 9 5SGA 40L4501 Fig. 18 General current and voltage waveforms with GTO-specific symbols ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 8 of 9 5SGA 40L4501 Fig. 19 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. Related documents: 5SYA 2036 5SYA 2046 5SZK 9104 5SZK 9105 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Cosmic Ray Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1208-02 March 05