VRRM IF(AV)M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25×103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 March 05 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating • Low on-state and switching losses • Optimized for snubberless operation Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate VRRM f = 50 Hz, tp = 10ms, Tvj = 140°C 4500 V VDClink Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) 2800 V 3200 V max Unit VDClink Characteristic values Parameter Symbol Conditions Repetitive peak reverse current IRRM min typ VR = VRRM, Tvj = 140°C 100 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force Fm Acceleration a Acceleration a min typ 36 40 max Unit 46 kN Device unclamped 50 m/s 2 Device clamped 200 m/s 2 Characteristic values Parameter Symbol Conditions min Weight m Housing thickness H 25.8 Surface creepage distance DS 33 typ Air strike distance Da 20 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 0.83 kg 26.1 mm mm mm 5SDF 10H4520 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ Half sine wave, TC = 70 °C max Unit 1440 A 2260 A 3 A 6 A2s 3 A 3.84×10 6 A2s typ max Unit 3.1 3.8 V 1.75 V 0.88 mΩ 25×10 tp = 10 ms, Tvj = 140°C, VR = 0 V 3.12×10 tp = 30 ms, Tvj = 140°C, VR = 0 V 16×10 Characteristic values Parameter Symbol Conditions On-state voltage VF IF = 2500 A, Tvj = 140°C Threshold voltage V(T0) Slope resistance rT Tvj = 140°C IF = 500...2500 A min Turn-on Characteristic values Parameter Symbol Conditions Peak forward recovery voltage VFRM max Unit dIF/dt = 600 A/µs, Tvj = 140°C min typ 80 V dIF/dt = 3000 A/µs, Tvj = 140°C 250 V max Unit 600 A/µs Turn-off Maximum rated values 1) Parameter Symbol Conditions Max. decay rate of on-state di/dtcrit current min typ IFM = 4000 A, Tvj = 140 °C VDClink = 2800 V Characteristic values Parameter Symbol Conditions max Unit Reverse recovery current IRM IFM = 3300 A, VDC-Link = 2800 V min typ 1600 A Reverse recovery charge Qrr -dIF/dt = 600 A/µs, LCL = 300 nH 5600 µC Turn-off energy Err CCL = 10 µF, RCL = 0.65 Ω, 9.5 J Tvj = 140°C, DCL = 5SDF 10H4520 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1170-00 March 05 page 2 of 7 5SDF 10H4520 Thermal Maximum rated values 1) Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg max Unit 0 typ 140 °C -40 140 °C Characteristic values Parameter Symbol Conditions max Unit Double-side cooled Fm = 36...46 kN 10 K/kW Rth(j-c)A Anode-side cooled Fm = 36...46 kN 18 K/kW Rth(j-c)C Cathode-side cooled Fm = 36...46 kN 22 K/kW Double-side cooled Fm = 36...46 kN 3 K/kW Single-side cooled Fm = 36...46 kN 6 K/kW Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 6.599 2.148 1.011 0.249 τi(s) 0.5067 0.0458 0.0054 0.0007 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1170-00 March 05 page 3 of 7 5SDF 10H4520 Max. on-state characteristic model: VF25 = Max. on-state characteristic model: ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F A25 915.50×10-3 202.5×10-3 ATvj + BTvj ⋅ I F + CTvj ⋅ ln(I F +1) + DTvj ⋅ I F Valid for IF = 300 – 30000 A Valid for IF = 300 – 30000 A B25 C25 347.20×10-6 VF140 = D25 A140 B140 C140 D140 0.00×100 -1.87×100 353.50×10-6 609.20×10-3 0.00×100 Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics Fig. 4 Surge on-state current vs. pulse length. Halfsine wave. Fig. 5 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1170-00 March 05 page 4 of 7 5SDF 10H4520 Fig. 6 Upper scatter range of turn-off energy per pulse vs. turn-off current. Fig. 7 Upper scatter range of turn-off energy per pulse vs reverse current rise rate. Fig. 8 Upper scatter range of repetitive reverse recovery charge vs reverse current rise rate. Fig. 9 Upper scatter range of reverse recovery current vs reverse current rise rate. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1170-00 March 05 page 5 of 7 5SDF 10H4520 Fig. 10 Max. turn-off energy per pulse vs. on-state voltage. Fig. 11 Diode Safe Operating Area VF(t), IF (t) dIF/dt VFR -dIF/dt IF (t) IF (t) VF (t) VF (t) Qrr t tfr tfr (typ) 10 µs VR (t) IRM Fig. 12 General current and voltage waveforms. Li LCL DCL RS IF VLC CCL DUT LLoad Fig. 13 Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1170-00 March 05 page 6 of 7 5SDF 10H4520 Fig. 14 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr Titel 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1170-00 March 05