APTGT50A120D1 Phase Leg ® Trench IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 4 5 1 Q2 6 7 3 2 2 1 4 5 7 6 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 270 100A @ 1100V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT50A120D1 – Rev 0, January 2004 3 Q1 VCES = 1200V IC = 50A @ Tc = 80°C APTGT50A120D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Test Conditions VGE = 0V, IC = 2mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min 1200 Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Min 1.4 5.0 Typ 1.7 2.0 5.8 Typ 3600 160 150 90 550 Max 5 2.1 Unit V mA V 6.5 400 V nA Max Unit pF ns 130 180 100 650 180 6.5 ns mJ Reverse diode ratings and characteristics Forward Voltage Erec Reverse Recovery Energy Qrr Reverse Recovery Charge VGE = 0V IF = 50A IF = 50A VR = 600V di/dt =990A/µs IF = 50A VR = 600V di/dt=990A/µs Tj = 25°C Tj = 125°C 1.6 1.6 Tj = 125°C 4 Tj = 25°C 5.2 Tj = 125°C 9.4 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight Min IGBT Diode Typ 2.2 mJ µC Max 0.45 0.75 2500 M5 M6 APT website – http://www.advancedpower.com -40 -40 -40 2 3 V Unit °C/W V 150 125 125 3.5 5 180 °C N.m g 2-3 APTGT50A120D1 – Rev 0, January 2004 VF APTGT50A120D1 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGT50A120D1 – Rev 0, January 2004 Package outline