ADPOW APTGF165DA60D1

APTGF165DA60D1
Boost Chopper
NPT IGBT Power Module
VCES = 600V
IC = 165A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Non Punch Through (NPT) fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M5 power connectors
• High level of integration
4
5
7
6
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operation Area
TC = 25°C
Max ratings
600
230
165
400
±20
730
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
July, 2003
1
2
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGF165DA60D1 – Rev 0
3
APTGF165DA60D1
ICES
All ratings @ Tj = 25°C unless otherwise specified
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eoff
Turn off energy
Symbol Characteristic
Diode Forward Voltage
Er
Reverse Recovery Energy
Qrr
Reverse Recovery Charge
Min
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5Ω
Min
Test Conditions
IF = 200A
VGE = 0V
IF = 200A
VR = 300V
di/dt =900A/µs
IF = 200A
VR = 300V
di/dt =900A/µs
TJ
TSTG
TC
Torque
Wt
1
1
2.0
2.2
500
Typ
9000
800
165
40
250
2.5
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
For terminals
Mounting torque
To Heatsink
Package Weight
6.5
400
V
nA
Max
Unit
pF
ns
50
ns
285
40
Tj = 125°C
4.1
Tj = 25°C
12
Tj = 125°C
19
Min
IGBT
Diode
Typ
mJ
Max
1.6
-40
-40
-40
2
3
Unit
V
mJ
µC
Max
0.17
0.29
2500
APT website – http://www.advancedpower.com
V
180
Tj = 25°C
Tj = 125°C
M5
M6
Unit
V
µA
mA
35
Typ
1.25
1.2
Symbol Characteristic
VISOL
Max
4.5
Min
Thermal and package characteristics
RthJC
Typ
600
6.3
Reverse diode ratings and characteristics
VF
Test Conditions
VGE = 0V, IC = 5 mA
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
T
VGE = 15V
j = 25°C
IC = 200A
Tj = 125°C
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
Unit
°C/W
V
150
125
125
3.5
5
180
July, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
°C
N.m
g
2-3
APTGF165DA60D1 – Rev 0
Electrical Characteristics
APTGF165DA60D1
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGF165DA60D1 – Rev 0
July, 2003
Package outline