CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 1/5 High Voltage NPN Epitaxial Planar Transistor BTC4062N3 Features • High Breakdown Voltage:BVCEO≥350V • Complementary to BTA1722N3 • Pb-free package Symbol Outline BTC4062N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature BTC4062N3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 350 350 6 500 225 150 -55~+150 V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. 350 350 6 20 30 30 20 15 40 - Typ. - Max. 50 50 0.3 0.35 0.5 1.0 0.75 0.85 0.9 2 200 200 200 6 Unit V V V nA nA V V V V V V V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=250V VEB=5V IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA VCE=10V, IC=100mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=20V, IC=10mA, f=20MHz VCB=20V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTC4062N3 BTC4062N3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 1Z CYStek Product Specification Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 3/5 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 125℃ Saturation Voltage---(mV) Current Gain---HFE 75℃ 125℃ 100 25℃ 75℃ 100 25℃ HFE@VCE=10V VCE(SAT)@IC=10IB 10 10 0.1 1 10 100 1000 1 Collector Current---IC(mA) 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 250 Power Dissipation---PD(mW) Saturation Voltage-(mV) 1000 75℃ 125℃ 25℃ 200 150 100 50 VCE(SAT)@IC=10IB 0 100 0.1 1 10 100 Collector Current IC-(mA) BTC4062N3 1000 0 50 100 150 200 Ambient Temperature---TA(℃ ) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 4/5 Reel Dimension Carrier Tape Dimension BTC4062N3 CYStek Product Specification Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 5/5 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE 1Z S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4062N3 CYStek Product Specification