CYSTEKEC BTNA44M3

CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
High Voltage NPN Epitaxial Planar Transistor
BTNA44M3
Features
• High breakdown voltage. (BVCEO = 400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB=10mA/1mA.
• Complementary to BTPA94M3
Symbol
Outline
BTNA44M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTNA44M3
Symbol
Limit
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
400
400
6
300
600
208
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
hFE 1
hFE 2
*hFE 3
*hFE 4
fT
Cob
Min.
400
400
6
40
52
45
40
20
-
Typ.
0.1
-
Max.
10
10
0.4
0.5
0.75
1.5
270
7
Unit
V
V
V
µA
µA
V
V
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=400V, IE=0
VEB=6V,IC=0
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=100MHz
VCB=20V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Range
BTNA44M3
K
52~120
P
82~180
Q
120~270
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage-(mV)
Current Gain---HFE
[email protected]=10V
100
[email protected]=10IB
1000
100
10
10
0.1
1
10
100
0.1
1000
1
10
100
1000
Collector Current ---IC(mA)
Collector Current ---IC(mA)
Power Derating Curve
Saturation Voltage vs Collector Current
700
10000
Power Dissipation---PD(mW)
Saturation Voltage-(mV)
600
[email protected]=10IB
1000
400
300
200
100
0
100
0.1
1
10
100
Collector Current--- IC(mA)
BTNA44M3
500
1000
0
50
100
150
200
Ambient Temperature---TA(℃ )
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 4/4
SOT-89 Dimension
Marking:
A
2
1
3
44
H
C
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA44M3
CYStek Product Specification