CYSTEKEC BTN5551A3

CYStech Electronics Corp.
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTN5551A3
Description
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTP5401A3
Symbol
Outline
BTN5551A3
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
BTN5551A3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
180
160
6
600
625
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
180
160
6
80
80
30
52
100
-
Typ.
0.1
-
Max.
50
50
0.15
0.2.
1
1
390
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=6V, IC=2mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE4
Rank
Range
K
52~120
P
82~180
Q
120~270
R
180~390
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Current Gain---HFE
Saturation Voltage---(mV)
[email protected]=6V
100
100
10
0.1
1
10
Collector Current--- IC(mA)
BTN5551A3
VCE(SAT)@IC=10IB
100
0.1
1
10
100
Collector Current ---IC(mA)
CYStek Product Specification
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1
[email protected]=12V
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
100
0.1
0.1
1
10
100
1000
Collector Current ---IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTN5551A3
CYStek Product Specification
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
3
N5551
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN5551A3
CYStek Product Specification