CYStech Electronics Corp. Spec. No. : C313N3-H Issued Date : 2003.09.26 Revised Date : Page No. : 1/4 Low VCESAT PNP Epitaxial Planar Transistor BTP8550N3 Features • Low VCE(SAT), -0.18V(typically) at IC=-500mA/IB=-50mA. • Complementary to BTN8050N3. Symbol Outline BTP8550N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTP8550N3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg -30 -20 -5 -1 225 556 150 -55~+150 V V V A mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313N3-H Issued Date : 2003.09.26 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(on) *hFE 1 *hFE 2 fT Cob Min. -30 -20 -5 100 80 - Typ. -0.18 150 15 Max. -500 -500 -0.3 -0.4 -1 500 - Unit V V V nA nA V V V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-400mA, IB=-20mA IC=-500mA, IB=-50mA VCE=-1V, IC=-150mA VCE=-1V, IC=-150mA VCE=-3V, IC=-800mA VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank Range BTP8550N3 C 100~200 D 150~300 E 250~500 CYStek Product Specification Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) 1000 Current Gain---HFE HFE@VCE=2V VCESAT@IC=20IB 100 10 100 0.1 1 10 100 1 1000 10 100 1000 Collector Current ---IC(mA) Collector Current ---IC(mA) Cutoff Frequency vs Collector Current Saturation Voltage vs Collector Current 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=20IB FT@VCE=2V 0.1 100 1 10 100 1000 1 10 100 Collector Current---IC(mA) Collector Current ---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) BTP8550N3 CYStek Product Specification Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp. Revised Date : Page No. : 4/4 SOT-23 Dimension A Marking: L 3 B B9 TE S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTP8550N3 CYStek Product Specification