CYSTEKEC BTP8550N3

CYStech Electronics Corp.
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 1/4
Low VCESAT PNP Epitaxial Planar Transistor
BTP8550N3
Features
• Low VCE(SAT), -0.18V(typically) at IC=-500mA/IB=-50mA.
• Complementary to BTN8050N3.
Symbol
Outline
BTP8550N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTP8550N3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
-30
-20
-5
-1
225
556
150
-55~+150
V
V
V
A
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-30
-20
-5
100
80
-
Typ.
-0.18
150
15
Max.
-500
-500
-0.3
-0.4
-1
500
-
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
IC=-400mA, IB=-20mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-3V, IC=-800mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 1
Rank
Range
BTP8550N3
C
100~200
D
150~300
E
250~500
CYStek Product Specification
Spec. No. : C313N3-H
Issued Date : 2003.09.26
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
1000
Current Gain---HFE
[email protected]=2V
[email protected]=20IB
100
10
100
0.1
1
10
100
1
1000
10
100
1000
Collector Current ---IC(mA)
Collector Current ---IC(mA)
Cutoff Frequency vs Collector Current
Saturation Voltage vs Collector Current
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=20IB
[email protected]=2V
0.1
100
1
10
100
1000
1
10
100
Collector Current---IC(mA)
Collector Current ---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTP8550N3
CYStek Product Specification
Spec. No. : C313N3-H
Issued Date : 2003.09.26
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
SOT-23 Dimension
A
Marking:
L
3
B
B9
TE
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP8550N3
CYStek Product Specification