CYSTEKEC BTA1015A3

Spec. No. : C306A3-T
Issued Date : 2003.08.26
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTA1015A3
Description
• The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.
• High voltage and high current : VCEO=-50V(min), IC=-150mA(max)
• High HFE and excellent linearity
• Complementary to BTC1815A3.
Symbol
Outline
BTA1015A3
TO-92
B:Base
C:Collector
E:Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTA1015A3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
IB
Pd
RθJA
Tj
Tstg
-50
-50
-5
-150
-50
400
250
125
-55~+125
V
V
V
mA
mA
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C306A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE 1
hFE 2
fT
Cob
Min.
-50
70
25
80
-
Typ.
80
-
Max.
-0.1
-0.1
-0.3
-1.1
400
Unit
V
µA
µA
V
V
-
7
MHz
pF
Test Conditions
IC=-1mA
VCB=-50V
VEB=-5V
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 1
Rank
Range
BTA1015A3
O
70~140
Y
120~240
GR
200~400
CYStek Product Specification
Spec. No. : C306A3-T
Issued Date : 2003.08.26
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=6V
100
VCE(SAT)@IC=10IB
100
10
10
0.1
1
10
100
0.1
1000
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1
Cutoff Frequency---FT(GHZ)
10000
Saturation Voltage---(mV)
1
VBE(SAT)@IC=10IB
1000
[email protected]=12V
0.1
100
0.1
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
450
400
350
300
250
200
150
100
50
0
0
50
100
150
Ambient Temperature --- Ta(℃ )
BTA1015A3
CYStek Product Specification
Spec. No. : C306A3-T
Issued Date : 2003.08.26
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
TO-92 Dimension
Marking:
α2
A
B
1
2
3
A1015
α3
C
D
H
I
G
Style: Pin 1.Emitter 2.Collector 3.Base
α1
E
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
F
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1015A3
CYStek Product Specification