CYSTEKEC BTA1579S3

Spec. No. : C307S3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTA1579S3
Description
• The BTP1579S3 is designed for high voltage amplification application.
• High BVCEO, BVCEO= -120V
• Complementary to BTC4102S3.
Symbol
Outline
BTA1579S3
SOT-323
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTA1579S3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
-120
-120
-5
-50
200
625
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307S3
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
hFE
fT
Cob
Min.
-120
-120
-5
56
-
Typ.
140
3.2
Max.
-500
-500
-0.5
390
-
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-100V
VEB=-4V
IC=-10mA, IB=-1mA
VCE=-6V, IC=-2mA
VCE=-12V, IC=-2mA, f=30MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
K
P
Q
R
Range
56~120
82~180
120~270
180~390
BTA1579S3
CYStek Product Specification
Spec. No. : C307S3
Issued Date : 2003.06.27
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
[email protected]=5V
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
10
VCE(SAT)@IC=10IB
100
10
0.1
1
10
100
0.1
1
10
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
100
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
[email protected]=12V
0.1
100
0.1
1
10
100
1000
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTA1579S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307S3
Issued Date : 2003.06.27
Revised Date :
Page No. : 4/4
SOT-323 Dimension
3
Marking:
A
Q
A1
1
C
Lp
2
TE
2L
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
Style: Pin 1.Base 2.Emitter 3.Collector
2 mm
1
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
Inches
DIM
Min.
Max.
e1
0.0256
He
0.0787 0.0886
Lp
0.0059 0.0177
Q
0.0051 0.0091
v
0.0079
w
0.0079
θ
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1579S3
CYStek Product Specification