HWC27NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications. 4 Absolute Maximum Ratings VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 2mA TCH Channel Temperature 175°C TSTG Storage Temperature -65 to +175°C Power Dissipation 3.5W PT * Source 0.0 0.0 58.5 344.5 400 Unit: µm Thickness: 100 ± 5 Chip size ± 50 Bond Pads 1-2 (Gate): Bond Pads 3-4 (Drain): * mounted on an infinite heat sink 60 x 60 60 x 60 Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests Symbol IDSS VP gm Parameters & Conditions Units Min. Typ. Max. Saturated Current at VDS=3V, VGS=0V mA 300 400 600 Pinch-off Voltage at VDS=3V, ID=20mA V -3.5 -2.0 -1.5 mS - 250 - dBm 27 28 - Transconductance at VDS=3V, ID=200mA P1dB Power Output at Test Points VDS=10V, ID=0.5 IDSS G1dB Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS dB 9 10 - PAE Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS % 30 40 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWC27NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) lS11l ∠ANG lS21l ∠ANG lS12l ∠ANG lS22l ∠ANG 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 0.845 0.839 0.839 0.837 0.834 0.832 0.828 0.827 0.827 0.827 0.829 0.827 0.830 0.828 0.827 0.827 0.825 -115.62 -126.96 -135.39 -141.73 -147.23 -151.60 -155.23 -158.30 -161.00 -163.08 -165.07 -167.18 -169.65 -171.56 -173.63 -175.28 -176.45 4.702 3.921 3.336 2.896 2.551 2.278 2.052 1.879 1.720 1.588 1.475 1.370 1.279 1.204 1.136 1.077 1.019 103.80 95.65 88.67 82.57 77.03 72.18 67.94 63.92 59.95 56.32 52.75 49.09 45.84 42.82 39.47 36.43 33.25 0.028 0.032 0.037 0.042 0.045 0.048 0.052 0.056 0.061 0.066 0.070 0.077 0.083 0.089 0.096 0.104 0.110 71.07 71.05 72.49 72.98 74.32 76.58 77.92 80.91 83.84 85.29 86.33 87.32 89.28 89.60 89.96 90.23 91.35 0.236 0.246 0.257 0.275 0.291 0.309 0.327 0.336 0.352 0.365 0.384 0.399 0.418 0.440 0.456 0.467 0.475 -49.89 -55.54 -62.80 -68.12 -73.17 -79.08 -82.34 -85.76 -89.00 -91.68 -94.59 -97.11 -100.45 -102.74 -105.73 -107.27 -111.08 Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 2 wires on each side Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.