HW HWL30YRF

HWL30YRF
L-Band GaAs Power FET
Autumn 2002 V1
Features
Outline Dimensions
•
Low Cost GaAs Power FET
•
Class A or Class AB Operation
•
Typical 16.5 dB Gain
•
5V to 10V Operation
Description
The HWL30YRF is a Medium Power GaAs FET
designed for various L-band & S-band
applications. It is presently offered in low cost
ceramic package.
RF Package (Ceramic)
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
3 mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
6W
PT
*
* mounted on an infinite heat sink.
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=5V, VGS=0V
mA
500
600
900
VP
Pinch-off Voltage at VDS=5V, ID=30mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=5V, ID=300mA
mS
-
300
-
Rth
Thermal Resistance
°C/W
-
15
25
dBm
30
31
-
P1dB
Power Output at Test Points
VDS=10V, ID=0.5IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5IDSS
dB
15
16.5
-
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID= ID=0.5IDSS
%
35
45
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30YRF
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°°C
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
PAE (%)
60
50
30
40
20
30
Gain
Po
Gain
Eff
20
10
10
0
0
0
2
4
6
8
10
12 14
16 18
20 22
Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=2.4GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
PAE (%)
60
50
30
40
20
30
Gain
Po
Gain
Eff
20
10
10
0
0
0
5
10
15
20
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30YRF
L-Band GaAs Power FET
Autumn 2002 V1
Total Power Dissipation,PT (W)
Power
Derating
Power
DeratingCurve
Curve
7
(25,6)
6
5
4
3
2
1
(175,0)
0
0
50
100
150
200
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30YRF
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.5
0.889
-90.882
10.672
121.778
0.015
37.028
0.185
-85.008
0.6
0.880
-101.517
9.739
114.753
0.016
33.933
0.202
-90.976
0.7
0.898
-111.715
8.957
107.828
0.018
25.758
0.221
-96.978
0.8
0.887
-119.853
8.230
101.908
0.019
22.178
0.236
-101.966
0.9
0.892
-127.305
7.598
95.905
0.020
17.975
0.257
-107.921
1.0
0.899
-133.797
7.057
90.171
0.021
13.021
0.277
-111.564
1.1
0.895
-139.819
6.556
85.468
0.021
11.448
0.289
-114.434
1.2
0.898
-145.143
6.121
80.722
0.020
6.972
0.305
-117.853
1.3
0.900
-149.874
5.719
76.230
0.022
1.280
0.320
-119.915
1.4
0.901
-154.299
5.402
71.953
0.021
-0.177
0.333
-122.220
1.5
0.902
-158.403
5.083
67.875
0.022
-4.225
0.351
-124.725
1.6
0.901
-162.158
4.805
63.682
0.022
-5.998
0.363
-126.712
1.7
0.901
-165.838
4.561
59.797
0.021
-8.293
0.373
-128.530
1.8
0.902
-169.285
4.335
56.201
0.023
-12.529
0.385
-130.724
1.9
0.904
-172.511
4.138
52.683
0.022
-13.387
0.398
-133.037
2.0
0.903
-175.577
3.952
49.148
0.022
-16.242
0.407
-134.993
2.1
0.900
-178.634
3.787
45.369
0.022
-17.751
0.419
-136.790
2.2
0.895
178.286
3.628
41.830
0.022
-20.360
0.429
-138.518
2.3
0.901
175.281
3.489
38.489
0.022
-20.631
0.441
-141.024
2.4
0.900
172.423
3.366
35.215
0.022
-24.775
0.449
-143.021
2.5
0.898
169.702
3.240
31.933
0.021
-26.487
0.460
-144.842
2.6
0.897
166.614
3.122
28.419
0.021
-27.431
0.465
-146.932
2.7
0.891
163.692
3.012
24.887
0.021
-29.193
0.472
-148.847
2.8
0.891
160.887
2.917
21.710
0.022
-30.270
0.480
-151.545
2.9
0.892
158.151
2.826
18.353
0.021
-33.867
0.490
-153.496
3.0
0.889
154.976
2.728
14.989
0.021
-34.591
0.495
-155.778
3.1
0.886
152.192
2.639
11.818
0.021
-36.992
0.499
-158.293
3.2
0.891
149.216
2.570
8.229
0.021
-39.301
0.509
-160.827
3.3
0.886
146.548
2.482
5.061
0.021
-41.369
0.513
-163.193
3.4
0.888
143.721
2.408
1.817
0.021
-43.313
0.520
-165.544
3.5
0.888
141.215
2.334
-1.350
0.021
-44.600
0.529
-168.143
3.6
0.885
138.428
2.261
-4.672
0.020
-46.532
0.534
-170.993
3.7
0.887
136.197
2.198
-7.464
0.021
-45.714
0.543
-172.808
3.8
0.880
133.751
2.128
-10.759
0.020
-48.349
0.547
-176.029
3.9
0.885
131.629
2.072
-13.887
0.020
-48.967
0.555
-178.609
0.882
129.363
2.012
-16.900
0.019
-50.990
0.562
4.0
-178.634
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.