HWC27YC C-Band Power FET Via Hole Chip Autumn 2002 V1 Outline Dimensions Features 650 • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4GHz • 5V to 10V Operation Source 435 1 215 2 3 Description The HWC27YC is a medium power GaAs FET designed for various RF and microwave applications. Absolute Maximum Ratings Source VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 2mA TCH Channel Temperature 175°C TSTG Storage Temperature -65 to +175°C Power Dissipation 3.5W PT * 4 0.0 0.0 58.5 344.5 400 Unit: µm Thickness: 50 ± 5 Chip size ± 50 Bond Pads 1-2 (Gate): Bond Pads 3-4 (Drain): 60 x 60 60 x 60 * mounted on an infinite heat sink Electrical Specifications (TA=25°C) f = 2.4 GHz for all RF Tests Symbol IDSS VP gm Parameters & Conditions Units Min. Typ. Max. Saturated Current at VDS=3V, VGS=0V mA 300 400 600 Pinch-off Voltage at VDS=3V, ID=20mA V -3.5 -2.0 -1.5 mS - 250 - dBm 27 28 - Transconductance at VDS=3V, ID=200mA P1dB Power Output at Test Points VDS=10V, ID=0.5 IDSS G1dB Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS dB 16 17 - PAE Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS % - 40 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWC27YC C-Band Power FET Via Hole Chip Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) lS11l ANG lS21l ANG lS12l ANG lS22l ANG 2.0 0.912 -118.90 5.295 104.40 0.024 35.50 0.413 -35.82 2.5 0.906 -128.90 4.540 95.77 0.025 31.08 0.409 -42.72 3.0 0.900 -138.90 3.784 87.16 0.026 26.65 0.404 -49.62 3.5 0.900 -144.50 3.335 80.57 0.026 25.72 0.410 -56.64 4.0 0.899 -150.20 2.886 73.98 0.025 24.78 0.416 -63.65 4.5 0.901 -153.70 2.585 68.26 0.025 25.24 0.429 -70.99 5.0 0.903 -157.20 2.284 62.54 0.024 25.70 0.441 -78.33 5.5 0.907 -159.90 2.072 57.40 0.024 26.84 0.468 -84.84 6.0 0.910 -162.50 1.860 52.26 0.023 27.98 0.495 -91.35 6.5 0.911 -164.20 1.696 47.77 0.023 29.32 0.521 -95.72 7.0 0.911 -165.80 1.533 43.27 0.022 30.66 0.547 -100.10 7.5 0.915 -167.20 1.413 39.22 0.022 32.61 0.573 -103.80 8.0 0.919 -168.50 1.293 35.17 0.021 34.55 0.598 -107.60 8.5 0.918 -169.90 1.200 31.33 0.022 37.37 0.626 -110.00 9.0 0.917 -171.40 1.107 27.50 0.022 40.20 0.654 -112.50 9.5 0.916 -172.00 1.037 24.27 0.022 41.37 0.671 -114.00 10.0 0.914 -172.60 0.966 21.04 0.022 42.54 0.688 -115.60 Bonding Manner Gate, drain pad: 1 wire on each pad Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.