HW HWL23NPB

HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Features
•
Plastic Packaged GaAs Power FET
•
Suitable for Commercial Wireless
Outline Dimensions
Applications
•
High Efficiency
•
3V to 6V Operation
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Description
2
3
The HWL23NPB is a medium Power GaAs FET
using surface mount type plastic package for
various L-Band applications. It is suitable for
various 900 MHz, 1900 MHz cellular/wireless
applications.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+7V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
1mA
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65 to +150°C
Power Dissipation
0.7 Watt
PT
PB Package (SOT-23)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=5V, VGS=0V
mA
90
110
-
VP
Pinch-off Voltage at VDS=5V, ID=5.5mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=5V, ID=55mA
mS
-
60
-
Rth
Thermal Resistance
°C/W
-
200
-
P1dB
Power Output at Test Points
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
dBm
17.5
21.0
-
G1dB
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
dB
13.0
14.0
-
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
%
35.0
45.0
-
16.5
19.5
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Typical Performance at 25°°C
Output Power & Efficiency vs Vds
@ f=0.9GHz,Ids=55mA
PAE (%)
60
Po (dBm)
22
50
20
40
18
30
Po
PAE
20
16
10
14
0
1
2
3
4
5
6
Vds (V)
Output Power & Efficiency vs Vds
@ f=1.9GHz,Ids=55mA
PAE (%)
60
Po (dBm)
22
50
20
40
18
30
Po
PAE
20
16
10
14
0
1
2
3
4
5
6
Vds (V)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
20
PAE (%)
60
50
15
Po
40
10
Gain
Eff
30
Gain
20
5
10
0
0
-8
-4
0
4
8
Pin (dBm)
12
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
PAE (%)
60
20
50
15
Po
40
Gain
Eff
30
10
Gain
20
5
10
0
0
-8
-4
0
4
8
12
16
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V
Po (dBm)
25
PAE (%)
60
50
20
Po
40
Gain
Eff
15
30
Gain
10
20
5
10
0
0
-8
-4
0
4
8
Pin (dBm)
12
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V
Po (dBm)
40
PAE (%)
70
60
30
50
Po
40
Gain
Eff
20
30
Gain
20
10
10
0
0
-8
-4
0
4
8
12
16
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=55mA
Po (dBm)
PAE (%)
60
25
50
20
40
15
30
Gain
20
Po
Gain
PAE
10
10
5
0
0.7
0.8
0.9
1.0
1.1
f (GHz)
Output Power & Efficiency & Gain vs Frequency
@ Vds=5V, Ids=55mA
Po (dBm)
PAE (%)
60
25
50
20
40
15
30
Gain
20
Po
Gain
PAE
10
10
5
0
1.6
1.7
1.8
1.9
2.0
2.1 f (GHz)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Power Derating Curve
Total Power Dissipation,PT (W)
1
(25,0.7)
0.5
(150,0)
0
0
50
100
150
225
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=3V, IDS=0.5IDSS
(GHz)
S11

∠ANG
S21

∠ANG
S12

∠ANG
S22

∠ANG
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.948
0.951
0.917
0.921
0.900
0.882
0.863
0.845
0.830
0.806
0.790
0.772
0.754
0.737
0.719
0.705
0.688
0.672
0.656
0.645
0.633
0.621
0.609
0.592
-23.77
-26.56
-30.62
-33.76
-37.95
-41.80
-45.32
-49.01
-53.02
-56.42
-60.86
-64.64
-68.42
-72.35
-75.84
-79.81
-83.30
-86.86
-90.42
-93.62
-96.88
-99.97
-102.83
-106.18
3.799
3.804
3.776
3.791
3.749
3.718
3.675
3.660
3.617
3.573
3.516
3.459
3.416
3.360
3.295
3.246
3.177
3.111
3.050
2.997
2.943
2.882
2.834
2.773
156.53
154.09
150.89
147.31
144.12
140.69
137.44
134.23
130.89
127.74
124.44
121.28
118.34
115.14
112.33
109.54
106.66
103.89
101.13
98.78
96.01
93.79
91.39
88.94
0.023
0.027
0.030
0.033
0.036
0.040
0.042
0.045
0.047
0.050
0.053
0.054
0.056
0.059
0.061
0.063
0.065
0.067
0.067
0.070
0.070
0.072
0.074
0.074
81.85
80.61
78.24
78.56
77.09
75.16
74.56
74.13
72.62
71.86
70.62
70.36
69.35
68.31
67.38
68.36
66.96
66.79
65.87
66.25
66.11
65.76
66.42
66.09
0.628
0.635
0.640
0.620
0.623
0.608
0.607
0.609
0.596
0.592
0.585
0.579
0.573
0.566
0.556
0.549
0.543
0.541
0.539
0.536
0.535
0.533
0.530
0.531
-6.09
-8.06
-8.25
-10.94
-11.31
-12.06
-13.70
-14.52
-16.12
-17.43
-18.68
-19.89
-20.89
-22.35
-23.90
-25.25
-26.54
-27.60
-28.52
-30.05
-31.04
-32.48
-33.54
-34.72
S-MAGN AND ANGLES
VDS=5V, IDS=0.5IDSS
(GHz)
S11

∠ANG
S21

∠ANG
S12

∠ANG
S22

∠ANG
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.951
0.954
0.920
0.926
0.904
0.889
0.870
0.851
0.837
0.816
0.800
0.784
0.764
0.750
0.732
0.716
0.700
0.686
0.672
0.658
0.647
0.636
0.625
0.606
-23.36
-26.14
-30.14
-33.20
-37.37
-41.13
-44.66
-48.32
-52.25
-55.67
-60.05
-63.85
-67.67
-71.58
-75.13
-79.06
-82.44
-86.01
-89.49
-92.95
-96.07
-99.18
-102.21
-105.58
3.450
3.461
3.448
3.452
3.426
3.402
3.370
3.359
3.326
3.287
3.243
3.195
3.159
3.110
3.055
3.018
2.957
2.902
2.846
2.794
2.753
2.695
2.648
2.595
157.05
154.77
151.59
147.98
144.89
141.52
138.17
135.14
131.69
128.60
125.29
122.12
119.17
115.98
113.24
110.26
107.41
104.53
101.76
99.40
96.46
94.13
91.62
89.15
0.020
0.022
0.024
0.026
0.030
0.031
0.033
0.036
0.037
0.039
0.040
0.042
0.043
0.045
0.047
0.048
0.049
0.050
0.052
0.052
0.054
0.055
0.057
0.058
82.24
80.78
78.75
79.31
77.60
75.36
74.89
73.98
73.82
72.86
71.72
72.09
70.69
71.38
70.94
71.01
71.24
70.51
70.96
71.62
71.12
72.37
73.34
72.95
0.758
0.767
0.776
0.753
0.757
0.746
0.741
0.745
0.734
0.726
0.722
0.714
0.711
0.702
0.697
0.693
0.690
0.687
0.682
0.681
0.678
0.675
0.674
0.672
-5.60
-7.30
-7.48
-9.89
-10.29
-10.86
-12.40
-13.31
-14.61
-15.93
-17.17
-18.31
-19.07
-20.61
-21.68
-22.81
-24.09
-25.21
-26.31
-27.68
-28.79
-30.12
-31.29
-32.53
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.