HW HWL30NC

HWL30NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Features
•
Low Cost GaAs Power FET
•
Class A or Class AB Operation
•
15 dB Typical Gain at 2.4 GHz
•
5V to 10V Operation
Outline Dimensions
860
S ou rce
650
1
4
430
2
5
3
6
Description
The HWL30NC is a medium power GaAs FET
designed for various L-band & S-band applications.
Absolute Maximum Ratings
210
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
3mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
6W
PT
*
S ou rce
0
0.0
58.5
344.5
Units: µm
Thickness: 100 ±5
Chip size ±50
Bond Pads 1-3 (Gate):
Bond Pads 4-6 (Drain):
* mounted on an infinite heat sink
400.0
60 x 60
60 x 60
Electrical Specifications (TA=25°C) f =2.4 GHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
500
600
900
VP
Pinch-off Voltage at VDS=3V, ID=30mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=300mA
mS
-
300
-
dBm
30
31
-
P1dB
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
dB
13
14
-
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
%
30
40
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
.
HWL30NC
L-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
0.828
0.812
0.830
0.811
0.817
0.828
0.813
0.819
0.826
0.823
0.825
0.827
0.826
0.827
0.825
0.827
0.828
0.833
0.828
0.830
0.828
0.831
0.834
0.835
0.833
0.836
0.833
0.836
0.838
0.837
0.836
0.839
0.837
0.839
0.842
0.841
-86.85
-96.54
-105.89
-113.18
-119.32
-125.06
-129.80
-134.07
-137.82
-141.15
-144.18
-146.87
-149.28
-151.54
-153.65
-155.43
-157.32
-158.78
-160.58
-162.09
-163.58
-164.72
-165.96
-167.28
-168.27
-169.57
-170.52
-171.64
-172.52
-173.45
-174.25
-175.18
-176.22
-176.89
-177.66
-178.41
11.250
10.165
9.290
8.497
7.841
7.249
6.716
6.254
5.852
5.512
5.178
4.911
4.654
4.405
4.191
4.006
3.834
3.684
3.520
3.376
3.240
3.129
3.028
2.924
2.816
2.724
2.645
2.567
2.490
2.417
2.351
2.288
2.219
2.171
2.109
2.058
128.50
123.44
118.75
114.64
110.70
107.12
104.30
101.39
98.89
96.61
94.31
92.03
90.18
88.40
86.65
84.67
83.00
81.40
79.85
78.29
76.79
75.41
73.96
72.59
71.13
69.69
68.48
67.26
65.95
64.77
63.57
62.34
61.01
59.76
58.57
57.50
0.016
0.018
0.019
0.020
0.022
0.022
0.022
0.023
0.024
0.025
0.025
0.026
0.027
0.027
0.028
0.029
0.029
0.029
0.031
0.031
0.032
0.032
0.033
0.034
0.035
0.035
0.036
0.038
0.038
0.039
0.040
0.040
0.042
0.043
0.044
0.045
55.74
52.29
49.15
48.79
49.43
48.53
47.08
47.20
48.68
48.10
48.54
48.16
50.97
51.47
52.13
52.99
52.40
54.16
54.55
57.09
57.32
58.39
60.60
58.77
59.69
60.61
60.44
62.05
63.14
64.60
66.22
66.35
66.45
67.29
67.01
68.10
0.176
0.177
0.174
0.175
0.171
0.170
0.176
0.175
0.180
0.184
0.184
0.192
0.199
0.199
0.202
0.207
0.213
0.220
0.217
0.220
0.223
0.230
0.237
0.239
0.243
0.245
0.251
0.253
0.260
0.262
0.267
0.273
0.275
0.285
0.288
0.294
-36.18
-39.82
-43.49
-45.31
-51.83
-57.06
-57.77
-59.91
-62.53
-63.07
-65.11
-67.30
-68.13
-69.23
-69.96
-72.44
-73.28
-74.11
-75.73
-77.08
-79.08
-79.62
-80.79
-81.99
-84.61
-85.61
-86.53
-87.36
-88.89
-90.54
-91.89
-92.75
-95.00
-95.58
-97.50
-98.70
Bonding Manner
Gate, drain pad: 1 wire on each pad
Source pad: 2 wires on each side
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
.