HW HWL27YRA

HWL27YRA
L-Band GaAs Power FET
Autumn 2002 V1
Features
Outline Dimensions
•
Low Cost GaAs Power FET
•
Class A or Class AB Operation
•
Greater than 17 dB Gain
•
5V to 10V Operation
Description
The HWL27YRA is a Medium Power GaAs FET
designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
2mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
3.5W
PT
*
RA Package (Ceramic)
* mounted on an infinite heat sink
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
300
400
600
VP
Pinch-off Voltage at VDS=3V, ID=20mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=200mA
mS
-
250
-
Rth
Thermal Resistance
°C/W
-
30
40
dBm
27.5
29
-
P1dB
Power Output at Test Points
VDS=10V, ID=0.5IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5IDSS
dB
16
17
-
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5IDSS
%
35
42
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL27YRA
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°°C
Output Power & Efficiency & Gain vs Input Power
@ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
30
PAE (%)
50
25
40
20
30
15
Gain
10
Po
Gain
Eff
20
10
5
0
0
0
4
8
12
Pin (dBm)
16
Output Power & Efficiency & Gain vs Input Power
@ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
30
PAE (%)
50
25
40
20
30
15
Gain
10
20
Po
Gain
Eff
10
5
0
0
0
4
8
12
16
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL27YRA
L-Band GaAs Power FET
Autumn 2002 V1
Total Power Dissipation,PT (W)
Power Derating Curve
6
4
(25,3.5)
2
(175,0)
0
0
50
100
150
200
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL27YRA
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.5
0.982
-61.461
9.844
136.813
0.013
52.623
0.447
-32.966
0.6
0.971
-69.936
9.365
129.921
0.014
47.681
0.444
-38.731
0.7
0.964
-81.633
8.899
121.728
0.015
44.018
0.428
-45.320
0.8
0.937
-90.910
8.363
115.284
0.017
36.674
0.420
-49.001
0.9
0.933
-98.950
7.961
108.905
0.018
30.805
0.428
-55.306
1.0
0.924
-106.780
7.490
102.487
0.019
28.107
0.428
-61.485
1.1
0.918
-113.821
7.061
97.625
0.020
22.025
0.41
-64.461
1.2
0.913
-120.643
6.612
91.913
0.020
17.253
0.414
-70.907
1.3
0.909
-126.386
6.291
86.997
0.020
13.667
0.419
-74.910
1.4
0.904
-131.833
5.935
82.084
0.021
13.004
0.423
-80.144
1.5
0.901
-136.947
5.614
77.424
0.021
9.034
0.427
-84.795
1.6
0.898
-141.533
5.305
72.989
0.021
5.959
0.431
-89.459
1.7
0.896
-145.822
5.059
68.707
0.021
3.927
0.439
-93.888
1.8
0.892
-149.743
4.789
64.775
0.021
-0.675
0.444
-98.561
1.9
0.891
-153.407
4.549
60.313
0.021
-3.457
0.460
-102.778
2.0
0.891
-156.920
4.345
56.755
0.021
-3.585
0.464
-106.597
2.1
0.887
-159.832
4.134
52.907
0.020
-6.903
0.478
-110.863
2.2
0.886
-162.929
3.948
49.197
0.020
-11.613
0.483
-115.106
2.3
0.886
-165.820
3.775
45.842
0.021
-11.788
0.499
-118.232
2.4
0.884
-168.354
3.616
42.255
0.020
-13.795
0.509
-122.794
2.5
0.885
-170.866
3.465
39.068
0.020
-14.222
0.520
-125.298
2.6
0.882
-173.301
3.316
35.427
0.019
-16.583
0.531
-130.150
2.7
0.884
-175.371
3.191
32.807
0.019
-19.663
0.541
-132.364
2.8
0.881
-177.307
3.060
29.347
0.019
-21.313
0.558
-136.654
2.9
0.880
-179.342
2.947
26.673
0.018
-21.557
0.564
-138.636
3.0
0.878
178.271
2.840
23.149
0.019
-23.821
0.583
-142.943
3.1
0.881
176.581
2.750
20.485
0.019
-22.535
0.589
-145.194
3.2
0.876
174.575
2.634
17.300
0.019
-23.390
0.605
-148.236
3.3
0.87
172.901
2.568
14.637
0.018
-24.783
0.613
-151.402
3.4
0.873
171.118
2.466
12.009
0.018
-25.211
0.630
-153.160
3.5
0.870
169.291
2.395
8.989
0.019
-28.791
0.637
-156.297
3.6
0.872
167.418
2.325
6.724
0.019
-27.836
0.652
-157.090
3.7
0.869
165.617
2.254
4.003
0.018
-31.087
0.662
-160.219
3.8
0.863
163.932
2.193
1.711
0.018
-31.379
0.670
-160.919
3.9
0.862
162.100
2.128
-1.228
0.017
-31.508
0.680
-163.691
4.0
0.861
160.391
2.089
-3.083
0.018
-32.003
0.685
-164.095
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.