HW HWL26NC

HWL26NC
March 2004
V2
Outline Dimensions
Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 17 dB Typical Gain at 2.4 GHz
• 5V to 10V Operation
Description
451.5
376
1
226
2
The HWL26NC is a medium power GaAs FET
designed for various L-band & S-band applications.
76
3
Absolute Maximum Ratings
VDS
Drain to Source
Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
1 mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
1.7 W
*
PT
226.0
4
0
0.0
75.5
275
440
524
Units: µm
Thickness: 50 ±5
Chip size ±50
Bond Pad 1, 3 (Source): 100 x 100
Bond Pad 2
(Gate): 100 x 100
Bond Pad 4
(Drain): 100 x 100
* mounted on an infinite heat sink
Electrical Specifications (TA=25°C) f = 2.4 GHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
150
200
280
VP
Pinch-off Voltage at VDS=3V, ID=10 mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=100 mA
mS
-
120
-
dBm
25
26
-
P1dB
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
dB
15
16
-
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
%
30
40
-
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
HWL26NC
March 2004
V2
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
0.937
0.913
0.914
0.879
0.876
0.877
0.841
0.836
0.829
0.808
0.801
0.789
0.774
0.764
0.749
0.742
0.735
0.730
0.719
0.712
0.704
0.702
0.699
0.691
0.685
0.682
0.677
0.673
0.669
0.666
0.660
0.659
0.655
0.654
0.654
0.649
-31.59
-36.66
-43.76
-48.51
-52.96
-58.75
-62.64
-67.67
-72.48
-76.57
-80.99
-84.77
-88.31
-92.13
-95.65
-98.77
-102.05
-105.18
-108.16
-111.27
-113.87
-116.48
-119.17
-121.69
-124.07
-126.73
-128.66
-131.03
-133.03
-135.18
-136.94
-138.99
-141.20
-142.72
-144.89
-146.36
7.266
7.019
6.853
6.665
6.500
6.372
6.141
5.941
5.765
5.593
5.405
5.260
5.086
4.922
4.763
4.627
4.501
4.379
4.224
4.112
3.994
3.885
3.793
3.698
3.594
3.509
3.420
3.339
3.269
3.189
3.118
3.052
2.976
2.925
2.864
2.805
154.62
150.87
147.84
143.96
140.47
137.32
133.92
130.86
128.22
125.43
122.53
120.03
117.70
115.31
112.97
110.70
108.73
106.93
104.69
102.73
100.83
99.36
97.68
96.00
94.13
92.49
90.96
89.48
87.98
86.58
85.05
83.73
82.18
80.79
79.38
78.25
0.009
0.010
0.012
0.013
0.016
0.016
0.018
0.018
0.019
0.020
0.020
0.022
0.022
0.023
0.023
0.024
0.024
0.025
0.025
0.025
0.026
0.025
0.026
0.026
0.027
0.027
0.027
0.028
0.027
0.028
0.028
0.028
0.029
0.030
0.029
0.029
67.60
71.96
70.20
65.51
62.61
60.98
60.19
57.63
56.57
56.60
53.30
53.04
53.41
51.56
50.83
50.81
49.19
49.32
48.70
47.52
48.07
48.93
47.71
46.92
48.15
47.53
46.75
47.21
46.44
47.13
47.88
47.91
48.50
49.20
48.35
49.49
0.621
0.627
0.621
0.631
0.618
0.607
0.613
0.604
0.602
0.604
0.596
0.597
0.599
0.595
0.593
0.590
0.589
0.592
0.583
0.581
0.576
0.576
0.578
0.576
0.568
0.566
0.566
0.566
0.564
0.558
0.557
0.559
0.551
0.556
0.551
0.548
-5.05
-6.70
-6.50
-8.01
-10.42
-11.30
-12.88
-13.41
-14.06
-14.73
-15.07
-16.45
-17.17
-17.33
-17.88
-18.69
-19.45
-19.67
-20.02
-20.34
-20.97
-21.26
-22.09
-22.52
-23.27
-23.60
-24.01
-24.41
-25.09
-25.64
-26.20
-26.72
-27.39
-28.40
-29.00
-29.68
Bonding Manner
Gate, drain pad: 1 wire on each pad
Source pad: 1 wires on each side
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.