HWL26YC L-Band Power FET Via Hole Chip Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 376 451.5 1 Description 226 The HWL26YC is a medium power GaAs FET 2 designed for various L-band & S-band applications. 226.0 4 76 Absolute Maximum Ratings 0 VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 1mA TCH Channel Temperature 175°C TSTG Storage Temperature -65 to +175°C Power Dissipation 1.7W PT * * mounted on an infinite heat sink 3 0.0 75.5 275 440 524 Units: µm Thickness: 50 ±5 Chip size ±50 Bond Pad 1, 3 (Source): 100 x 100 Bond Pad 2 (Gate): 100 x 100 Bond Pad 4 (Drain): 100 x 100 Electrical Specifications (TA=25°C) f = 2.4 GHz for all RF Tests Symbol Parameters & Conditions Units Min. Typ. Max. IDSS Saturated Current at VDS=3V, VGS=0V mA 150 200 280 VP Pinch-off Voltage at VDS=3V, ID=10mA V -3.5 -2.0 -1.5 gm Transconductance at VDS=3V, ID=100mA mS - 120 - dBm 25 26 - P1dB Power Output at Test Points VDS=10V, ID=0.5 IDSS G1dB Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS dB 16 17 - PAE Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS % 35 42 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWL26YC L-Band Power FET Via Hole Chip Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=9V, IDS=0.5IDSS (GHz) lS11l ∠ANG lS21l ∠ANG lS12l ∠ANG lS22l ∠ANG 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 0.994 0.994 0.999 0.975 0.974 0.971 0.966 0.965 0.952 0.960 0.940 0.945 0.933 0.926 0.923 0.922 0.923 0.918 0.913 0.909 0.904 0.899 0.895 0.894 0.893 0.888 0.886 0.884 0.878 0.879 0.875 0.872 0.872 0.872 0.870 0.868 -22.26 -24.49 -30.31 -35.18 -38.65 -42.19 -47.41 -51.99 -55.29 -59.25 -62.73 -66.79 -69.79 -74.40 -77.56 -80.63 -84.47 -87.53 -90.61 -93.75 -96.62 -99.71 -102.26 -104.90 -107.51 -109.93 -112.39 -114.54 -116.84 -119.03 -121.05 -123.18 -125.31 -127.10 -129.01 -130.87 6.048 5.904 5.953 5.843 5.805 5.778 5.635 5.583 5.480 5.395 5.305 5.214 5.106 5.018 4.968 4.853 4.748 4.669 4.575 4.478 4.387 4.303 4.199 4.118 4.046 3.953 3.857 3.778 3.715 3.649 3.583 3.491 3.426 3.369 3.306 3.247 164.50 161.84 158.76 155.58 153.18 150.54 147.98 144.84 142.64 140.07 137.39 135.03 132.75 130.23 128.04 125.83 123.55 121.49 119.42 117.36 115.54 113.57 111.68 109.75 108.05 106.36 104.59 102.93 101.39 99.78 98.20 96.71 95.12 93.71 92.20 90.73 0.008 0.009 0.012 0.012 0.014 0.016 0.016 0.018 0.019 0.020 0.021 0.022 0.024 0.023 0.025 0.026 0.027 0.027 0.028 0.029 0.030 0.030 0.030 0.030 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 0.032 0.033 0.033 0.033 74.22 75.82 75.97 72.36 68.69 69.80 67.06 63.89 60.46 60.68 59.88 59.10 54.90 54.44 52.68 52.20 49.18 49.90 48.65 47.36 45.41 44.54 44.27 41.72 41.41 40.01 40.14 39.58 39.64 36.82 36.18 35.49 34.37 35.56 34.61 33.36 0.676 0.670 0.652 0.658 0.662 0.657 0.650 0.635 0.643 0.629 0.636 0.623 0.627 0.624 0.624 0.615 0.606 0.604 0.601 0.599 0.595 0.597 0.582 0.583 0.577 0.581 0.570 0.571 0.570 0.567 0.570 0.564 0.558 0.557 0.555 0.554 -6.59 -9.32 -9.24 -9.09 -10.89 -12.67 -11.25 -12.30 -13.15 -14.02 -14.96 -15.66 -16.67 -16.47 -17.96 -18.58 -18.56 -19.84 -20.18 -20.97 -21.42 -22.14 -22.82 -23.87 -24.64 -24.59 -25.33 -26.41 -26.75 -27.72 -28.31 -28.57 -29.61 -30.27 -31.37 -31.74 Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 1 wires on each side (Not necessary, subject to user’s need) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.