HW HWC34NC

HWC34NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Features
Outline Dimensions
•
Low Cost GaAs Power FET
•
Class A or Class AB Operation
•
8.5 dB Typical Gain at 4 GHz
•
5V to 10V Operation
1525.0
9
1392.5
1235.0
1
5
1077.5
10
Description
920.0
2
The HWC34NC is a power GaAs FET designed
6
762.5
11
for various L-band & S-band applications.
605.0
3
Absolute Maximum Ratings
447.5
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
Drain Current
IDSS
7
12
290.0
4
8
132.5
ID
13
0.0
IG
Gate Current
6mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
12W
PT
*
0.0
444.5
75.5
524.0
Units: µm
Thickness: 100 ±5
Chip size ±50
Bond Pads 1-4 (Gate):
100 x 100
Bond Pads 5-8 (Drain):
100 x 100
Bond Pads 9-13(Source): 100 x 100
* mounted on an infinite heat sink
Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
900
1200
1600
VP
Pinch-off Voltage at VDS=3V, ID=60mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=600mA
mS
-
700
-
dBm
32
33
-
P1dB
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
dB
6.5
7.5
-
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
%
25
30
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWC34NC
C-Band Power FET Non-Via Hole Chip
March 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
lS11l
∠ANG
lS21l
∠ANG
lS12l
∠ANG
lS22l
∠ANG
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
0.741
0.740
0.743
0.739
0.739
0.736
0.733
0.732
0.73
0.730
0.729
0.720
0.716
0.704
0.692
0.673
0.649
-162.95
-167.73
-171.28
-173.74
-176.23
-178.33
179.79
178.19
176.65
175.59
174.46
172.75
170.43
168.33
165.78
163.35
160.96
3.027
2.432
2.025
1.731
1.511
1.343
1.206
1.101
1.014
0.943
0.884
0.832
0.788
0.757
0.728
0.712
0.700
78.58
72.17
66.45
61.37
56.74
52.59
48.98
45.57
42.26
39.40
36.76
34.64
33.00
31.55
29.73
28.60
27.33
0.051
0.063
0.074
0.088
0.101
0.116
0.131
0.148
0.167
0.186
0.208
0.231
0.257
0.285
0.318
0.355
0.397
75.38
77.31
78.97
80.17
80.68
80.95
81.81
81.84
81.32
81.33
80.28
79.21
78.26
76.82
75.03
72.46
70.08
0.343
0.368
0.392
0.420
0.449
0.478
0.506
0.524
0.540
0.556
0.564
0.578
0.591
0.602
0.600
0.593
0.589
-149.69
-147.33
-145.34
-144.05
-142.95
-142.34
-142.38
-142.79
-144.48
-145.20
-146.77
-147.87
-148.61
-149.79
-151.32
-154.11
-156.34
Bonding Manner
Gate, drain pad: 1 wire on each pad
Source pad: 1 wires on each pad
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.