DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY Note LEAD PLATING PACKING Pure Sn (Tin) Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) typ. 0.27 g Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) (TO-252) • Low input capacitance Ciss = 2300 pF TYP. • Logic level drive type ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±50 A ID(pulse) ±150 A Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) PT1 45 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 23 A Single Avalanche Energy Note2 EAS 52 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.77 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18885EJ1V0DS00 (1st edition) Date Published July 2007 NS Printed in Japan 2007 2SK4078 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 25 A 7.0 RDS(on)1 VGS = 10 V, ID = 25 A 6.3 8.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 13 A 9.5 14.0 mΩ Input Capacitance Ciss VDS = 10 V, 2300 pF Output Capacitance Coss VGS = 0 V, 360 pF Reverse Transfer Capacitance Crss f = 1 MHz 220 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 25 A, 12 ns Rise Time tr VGS = 10 V, 15 ns Turn-off Delay Time td(off) RG = 0 Ω 51 ns Fall Time tf 9 ns Total Gate Charge QG VDD = 32 V, 45 nC Gate to Source Charge QGS VGS = 10 V, 7 nC QGD ID = 50 A 13 nC VF(S-D) IF = 50 A, VGS = 0 V Reverse Recovery Time trr IF = 50 A, VGS = 0 V, 30 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 26 nC Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note 2.0 S 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D18885EJ1V0DS td(on) ton tf toff 2SK4078 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 60 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 50 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ) ( on DS GS R (V d it e Lim ) V i0 1 = ID(DC) ID(pulse) PW =1 i DC 10 m μs s i i is si p s er D m 1 00 0 Po w 1i 1i at io n Li m it e d 0.1 TC = 25°C Single Pulse 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 Rth(ch-A) = 125°C/Wi 100 10 Rth(ch-C) = 2.77°C/Wi 1 Single Pulse 0.1 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18885EJ1V0DS 3 2SK4078 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 150 1000 100 ID - Drain Current - A ID - Drain Current - A VGS = 10 V 4.5 V 100 50 Tch = −55°C 25°C 75°C 150°C 10 1 0.1 0.01 VDS = 10 V Pulsed Pulsed 0 0.001 0.5 1 1.5 2 0 1 2 5 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 2.5 2 1.5 1 0.5 VDS = 10 V ID = 1 mA 0 -100 -50 0 50 100 150 100 Tch = −55°C 25°C 10 1 75°C 150°C VDS = 10 V Pulsed 0.1 0.1 200 1 Pulsed 16 12 VGS = 4.5 V 10 V 4 0 1 10 100 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 20 8 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 4 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 20 Pulsed ID = 10 A 25 A 50 A 16 12 ID - Drain Current - A 4 3 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 0 8 4 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D18885EJ1V0DS 20 2SK4078 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 20 Ciss, Coss, Crss - Capacitance - pF 16 VGS = 4.5 V, ID = 13 A 12 8 10 V, 25 A 4 Pulsed 0 -100 Ciss 1000 Coss 100 Crss VGS = 0 V f = 1 MHz 10 -50 0 50 100 150 200 0.1 Tch - Channel Temperature - °C 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 40 VDS - Drain to Source Voltage - V 100 td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(off) td(on) tr 10 tf VDD = 20 V VGS = 10 V RG = 0 Ω 35 VDD = 32 V 20 V 8V 30 25 20 9 6 VGS 15 10 3 VDS 5 1 ID = 50 A 0 0 0.1 1 10 0 100 ID - Drain Current - A 10 20 30 40 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 VGS = 10 V 100 10 0V 1 0.1 Pulsed trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 1 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 10 0.01 di/dt = 100 A/μs VGS = 0 V 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D18885EJ1V0DS 5 2SK4078 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 3 1.14 MAX. 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18885EJ1V0DS 2SK4078 TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION K4078 Abbreviation of part number Pb-free plating marking Lot code RECOMMENDED SOLDERING CONDITIONS The 2SK4078 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Recommended Condition Symbol IR60-00-3 Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Partial heating Maximum temperature (Pin temperature): 350°C or below P350 Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Data Sheet D18885EJ1V0DS 7 2SK4078 • The information in this document is current as of July, 2007. The information is subject to change without notice. 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