DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4143 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low input capacitance Ciss = 820 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK4143-S17-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tube 50 p/tube Isolated TO-220 typ. 2.2 g Note Pb-free (This product does not contain Pb in the external electrode). ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±20 A ID(pulse) ±50 A PT1 20 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT2 2.0 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C Storage Temperature Single Avalanche Current Note2 IAS 15 A Single Avalanche Energy Note2 EAS 22.5 mJ (Isolated TO-220) Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 6.25 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 62.5 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18772EJ1V0DS00 (1st edition) Date Published May 2007 NS Printed in Japan 2007 2SK4143 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 10 A 5 10 RDS(on)1 VGS = 10 V, ID = 10 A 37 44 mΩ RDS(on)2 VGS = 4.0 V, ID = 10 A 44 78 mΩ Input Capacitance Ciss VDS = 10 V, 820 pF Output Capacitance Coss VGS = 0 V, 150 pF Reverse Transfer Capacitance Crss f = 1 MHz 62 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 10 A, 8.6 ns Rise Time tr VGS = 10 V, 8.6 ns Turn-off Delay Time td(off) RG = 10 Ω 38 ns Fall Time tf 7.1 ns Total Gate Charge QG VDD = 48 V, 18 nC Gate to Source Charge QGS VGS = 10 V, 2.4 nC QGD ID = 20 A 4.8 nC VF(S-D) IF = 20 A, VGS = 0 V 1.0 Reverse Recovery Time trr IF = 20 A, VGS = 0 V, 39 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 50 nC Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note S 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D18772EJ1V0DS td(on) ton tf toff 2SK4143 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 20 15 10 0 5 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 (o DS n) 10 1i 0 DC i m s Se co nd ar y D er 1 PW ID(pulse) p si is io at ra ke do d it e m Li TC = 25°C Single Pulse 0μ s s 1i 0 m s i B n 0.1 =1 i 0μ 1i R S G (V ID(DC) d it e Lim ) V i0 =1 w Po w n Li m it e d 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 62.5°C/Wi 100 10 Rth(ch-C) = 6.25°C/Wi 1 0.1 Single Pulse 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18772EJ1V0DS 3 2SK4143 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 50 100 VDS = 10 V Pulsed VGS = 10 V ID - Drain Current - A ID - Drain Current - A 40 4.0 V 30 20 10 10 1 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 0.1 0.01 Pulsed 0 0.001 0 1 2 3 4 0 VDS - Drain to Source Voltage - V 2.5 2 1.5 1 VDS = 10 V ID = 1 mA 0 -25 25 75 125 125°C 150°C 1 VDS = 10 V Pulsed 0.1 0.1 1 Pulsed 100 80 60 VGS = 4.0 V 40 10 V 20 0 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 Pulsed 100 80 ID = 20 A 10 A 4.0 A 60 40 20 ID - Drain Current - A 4 10 ID - Drain Current - A 120 10 5 Tch = −55°C −25°C 25°C 75°C 10 175 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 4 100 Tch - Channel Temperature - °C 0.1 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 3 -75 2 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0.5 1 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D18772EJ1V0DS 20 2SK4143 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 120 ID = 10 A Pulsed 100 Ciss, Coss, Crss - Capacitance - pF VGS = 4.0 V 80 60 10 V 40 20 Ciss 1000 Coss 100 VGS = 0 V f = 1 MHz 0 10 -75 -25 25 75 125 175 0.1 Tch - Channel Temperature - °C 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 60 VDS - Drain to Source Voltage - V 100 td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(off) tf td(on) 10 tr VDD = 30 V VGS = 10 V RG = 10 Ω 1 0.1 12 VDD = 48 V 30 V 12 V 50 40 10 8 30 6 VGS 20 4 10 2 VDS ID = 20 A 0 1 10 100 0 0 ID - Drain Current - A 5 10 15 20 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 VGS = 10 V 10 1 0V 0.1 Pulsed trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A Crss 100 10 0.01 di/dt = 100 A/μs VGS = 0 V 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D18772EJ1V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK4143 PACKAGE DRAWING (Unit: mm) Isolated TO-220 4.7±0.2 10.0±0.3 3.2±0.2 1.47 MAX 13.5 MAX. 3.0 TYP. 3.30±0.20 15.87±0.3 2.54±0.2 2.76±0.2 0.8±0.2 2.54 TYP. 2.54 TYP. 0.50±0.1 1. Gate 2. Drain 3. Source 1 2 3 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D18772EJ1V0DS 2SK4143 MARKING INFORMATION NEC K4143 Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The 2SK4143 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Wave soldering Soldering Conditions Recommended Condition Symbol Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less THDWS Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less P350 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D18772EJ1V0DS 7 2SK4143 • The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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