DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note NP160N04TDG-E2-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 800 p/reel TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode). FEATURES • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A • Logic level drive type (TO-263-7pin) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±160 A Note1 40 V ID(pulse) ±640 A Total Power Dissipation (TC = 25°C) PT1 220 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Storage Temperature Tstg −55 to +175 °C EAS 372 mJ Drain Current (pulse) Single Avalanche Energy Note2 Repetitive Avalanche Current Note3 IAR 61 A Repetitive Avalanche Energy Note3 EAR 372 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. RG = 25 Ω, Tch(peak) ≤ 150°C THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.68 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18761EJ2V0DS00 (2nd edition) Date Published July 2007 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2007 NP160N04TDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 V | yfs | VDS = 5 V, ID = 40 A 37 94 RDS(on)1 VGS = 10 V, ID = 80 A 1.6 2.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 80 A 2.2 5.4 mΩ Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S <R> Input Capacitance Ciss VDS = 25 V, 10500 15750 pF <R> Output Capacitance Coss VGS = 0 V, 980 1470 pF <R> Reverse Transfer Capacitance Crss f = 1 MHz 630 1140 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 80 A, 35 80 ns Rise Time tr VGS = 10 V, 55 140 ns Turn-off Delay Time td(off) RG = 0 Ω 107 220 ns Fall Time tf 17 50 ns 270 nC Total Gate Charge Note QG VDD = 32 V, 180 QGS VGS = 10 V, 30 nC QGD ID = 160 A 57 nC VF(S-D) IF = 160 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 160 A, VGS = 0 V, 49 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 60 nC Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note 1.5 V Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D18761EJ2V0DS td(on) ton tf toff NP160N04TDG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 200 150 100 50 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 10000 ID(pulse) i i m s d it e Lim 1 wn 0.1 1i 0 o ed ak 0.1 0.01 Br d it e im nL TC = 25°C Single Pulse μs s t io ip a i ss 1 00 i ID(DC) DC D er 10 =1 1i m 100 PW y ar nd co Se d it e Lim V ) n) (o i0 S 1 R D GS = (V w Po 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 83.3°C/Wi 10 1 Rth(ch-C) = 0.68°C/Wi 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D18761EJ2V0DS 10 100 1000 3 NP160N04TDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 700 VGS = 10 V ID - Drain Current - A ID - Drain Current - A 600 500 400 4.5 V 300 200 TA = −55°C 25°C 75°C 150°C 175°C 1 0.01 0 0.5 1 1.5 2 1 2.5 2 3 4 5 6 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.5 2 1.5 1 0.5 VDS = VGS ID = 250 μA 0 -75 -25 25 75 125 175 | yfs | - Forward Transfer Admittance - S VDS - Drain to Source Voltage - V 1000 Tch = −55°C 25°C 75°C 100 10 150°C 175°C VDS = 5 V Pulsed 1 225 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 6 Pulsed 5 4 3 VGS = 4.5 V 2 10 V 1 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V 10 Pulsed 0 RDS(on) - Drain to Source On-state Resistance - mΩ 100 0.1 100 ID - Drain Current - A 4 VDS = 10 V Pulsed 12 ID = 80 A Pulsed 10 8 6 4 2 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D18761EJ2V0DS 20 NP160N04TDG <R> CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 6 ID = 80 A Pulsed 4 VGS = 4.5 V 3 10 V 2 1 Ciss 10000 Coss 1000 VGS = 0 V f = 1 MHz 100 0.01 0 -75 -25 25 75 125 175 225 SWITCHING CHARACTERISTICS 1 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 40 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns 0.1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C td(off) 100 tr td(on) 10 tf VDD = 20 V VGS = 10 V RG = 0 Ω 35 VDD = 32 V 20 V 8V 30 9 25 6 20 VGS 15 3 10 VDS 5 1 ID = 160 A Pulsed 0 0.1 1 10 100 0 1000 50 100 150 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 0 200 1000 100 VGS = 10 V 0V 10 1 Pulsed trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Crss 100 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 0 0.5 1 1.5 0.1 1 10 100 1000 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D18761EJ2V0DS 5 VGS - Gate to Source Voltage - V 5 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP160N04TDG PACKAGE DRAWING (Unit: mm) TO-263-7pin (MP-25ZT) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18761EJ2V0DS NP160N04TDG TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 160N04 DG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP160N04TDG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Recommended Condition Symbol Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Partial heating Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less P350 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D18761EJ2V0DS 7 NP160N04TDG • The information in this document is current as of July, 2007. The information is subject to change without notice. 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