UNITPOWER UM4302

UM4302
N-Ch and P-Ch Fast Switching MOSFETs
General Description
Product Summery
The UM4302 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The UM4302 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDSON
ID
40V
15mΩ
11.6A
-40V
32mΩ
-8.6A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Features
z Networking DC-DC Power System
z CCFL Back-light Inverter
z Advanced high cell density Trench technology
SOP8 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
D1
D1 D2
D2
z Green Device Available
Absolute Maximum Ratings
S1
S2
G1
G2
Rating
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=100℃
IDM
±20
±20
V
1
11.6
-8.6
A
1
9
-6.7
A
23
-17
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
69
76
mJ
IAS
Avalanche Current
25
-28.6
A
4
[email protected]=25℃
Total Power Dissipation
3.5
3.5
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
Thermal Data
Symbol
Parameter
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient 1
Typ.
---
85
℃/W
RθJC
Thermal Resistance Junction-Case1
---
36
℃/W
1
UM4302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
40
---
---
V
Reference to 25℃ , ID=1mA
---
0.034
---
V/℃
VGS=10V , ID=8A
---
12
15
VGS=4.5V , ID=6A
---
16
20
1.0
1.5
2.5
V
---
-5.64
---
mV/℃
VDS=32V , VGS=0V , TJ=25℃
---
---
1
VDS=32V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=8A
---
20
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.1
4.2
Ω
Qg
Total Gate Charge (4.5V)
---
10.7
---
Qgs
Gate-Source Charge
---
3.3
---
Qgd
Gate-Drain Charge
---
4.2
---
Td(on)
VDS=20V , VGS=4.5V , ID=8A
nC
---
8.6
---
Rise Time
VDD=12V , VGS=10V , RG=3.3Ω
---
3.4
---
Turn-Off Delay Time
ID=6A
---
24.8
---
Fall Time
---
2.2
---
Ciss
Input Capacitance
---
1314
---
Coss
Output Capacitance
---
120
---
Crss
Reverse Transfer Capacitance
---
88
---
Min.
Typ.
Max.
Unit
45
---
---
mJ
Min.
Typ.
Max.
Unit
Tr
Td(off)
Tf
Turn-On Delay Time
uA
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=20A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
2
Diode Forward Voltage
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
---
---
11.6
A
---
---
23
A
---
---
1.2
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM4302
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-40
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.02
---
V/℃
VGS=-10V , ID=-6A
---
26
32
VGS=-4.5V , ID=-3A
---
38
46
-1.0
-1.6
-2.5
V
---
3.72
---
mV/℃
VDS=-32V , VGS=0V , TJ=25℃
---
---
1
VDS=-32V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-8A
---
13
---
S
Qg
Total Gate Charge (-4.5V)
---
11.5
---
Qgs
Gate-Source Charge
---
3.5
---
Qgd
Gate-Drain Charge
---
3.3
---
Td(on)
VDS=-15V , VGS=-4.5V , ID=-1A
nC
---
22
---
Rise Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
15.7
---
Turn-Off Delay Time
ID=-1A
---
59
---
Fall Time
---
5.5
---
Ciss
Input Capacitance
---
1415
---
Coss
Output Capacitance
---
134
---
Crss
Reverse Transfer Capacitance
---
102
---
Min.
Typ.
Max.
Unit
37
---
---
mJ
Min.
Typ.
Max.
Unit
Tr
Td(off)
Tf
Turn-On Delay Time
uA
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=-25V , L=0.1mH , IAS=-20A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage2
2,6
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
---
---
-8.6
A
---
---
-17
A
---
---
-1.2
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-28.6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
3
UM4302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
20
12
ID=8A
VGS=10V
10
VGS=7V
16
VGS=4.5V
RDSON (mΩ)
ID Drain Current (A)
VGS=5V
8
6
12
VGS=3V
4
2
8
0
0
0.25
0.5
0.75
2
1
VDS Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
4
6
8
VGS (V)
10
Fig.2 On-Resistance vs. G-S Voltage
10
6
VGS , Gate to Source Voltage (V)
IS Source Current(A)
VDS=20V
4
TJ=150℃
TJ=25℃
2
0
0.00
0.25
0.50
0.75
ID=8A
8
6
4
2
0
1.00
0
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
10
15
QG , Total Gate Charge (nC)
20
25
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
1.4
Normalized VGS(th)
5
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
4
150
UM4302
N-Ch and P-Ch Fast Switching MOSFETs
10000
100.00
F=1.0MHz
10.00
10us
ID (A)
1000
100us
1.00
Coss
100
Crss
10ms
100ms
DC
0.10
TC=25℃
Single Pulse
10
0.01
1
5
9
13
17
21
25
0.1
1
10
VDS Drain to Source Voltage (V)
100
1000
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
Normalized Thermal Response (RθJC)
Capacitance (pF)
Ciss
DUTY=0.5
0.2
0.1
0.1
0.05
P DM
T ON
T
0.02
D = TON/T
TJpeak = TC+P DMXRθJC
0.01
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
5
UM4302
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Typical Characteristics
50
12
ID=-8A
VGS=-10V
40
VGS=-7V
8
RDSON (mΩ)
-ID Drain Current (A)
10
VGS=-5V
6
VGS=-4.5V
30
4
VGS=-3V
2
0
20
0
0.5
1
1.5
-VDS , Drain-to-Source Voltage (V)
2
4
Fig.1 Typical Output Characteristics
6
-VGS (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
8
10
-VGS Gate to Source Voltage (V)
-IS Source Current(A)
VDS=-15V
6
ID =-1A
7.5
4
TJ=150℃
2
TJ=25℃
2.5
0
0.2
0.4
0.6
0.8
5
0
1
0
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
10
15
20
QG , Total Gate Charge (nC)
25
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
1.5
Normalized VGS(th)
5
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature (℃)
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
6
150
UM4302
N-Ch and P-Ch Fast Switching MOSFETs
10000
100.00
F=1.0MHz
Capacitance (pF)
Ciss
10.00
1000
-ID (A)
100us
1.00
Coss
1ms
100
Crss
10ms
100ms
DC
0.10
o
Tc=25 C
Single Pulse
0.01
10
1
5
9
13
17
21
-VDS , Drain to Source Voltage(V)
0.1
25
1
10
-VDS (V)
100
Fig.8 Safe Operating Area
Fig.7 Capacitance
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
P DM
T ON
T
0.02
D = TON/T
TJpeak = TC+P DMXRθJC
0.01
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
7
10