ACE1613B N-Channel Enhancement Mode MOSFET Description ACE1613B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features VDS =25V, ID=60A, VGS 20V RDS(ON)@VGS=10V, IDS=40A, Typ 4.8mΩ RDS(ON)@VGS=4.5V, IDS=20A, Typ 6.0mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 25 V VGSS ±20 V IDM 150 A ID 17 A PD 1.5 W IDM 150 A ID 22 A PD 2.5 W IDM 150 A Gate-Source Voltage Pulsed Drain Current (Note 2) Mounted on PCB of Minimum Footprint Continuous Drain Current Total Power Dissipation Pulsed Drain Current 2 Mounted on PCB of 1in Pad Area (Note 2) Total Power Dissipation Mounted on Large Heat Sink (Note 1) Continuous Drain Current Pulsed Drain Current (Note 1) (Note 1) (Note 1) (Note 2) Continuous Drain Current Total Power Dissipation (Note 1) (Note 1) Operating Junction Temperature / Storage Temperature Range ID PD 60 (Note 3) 50 TJ/TSTG -55/150 A W O C Packaging Type TO-252 VER 1.2 1 ACE1613B N-Channel Enhancement Mode MOSFET Ordering information ACE1613B XX + H Halogen - free Pb - free YM : TO-252 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current V(BR)DSS VGS=0V, ID=250uA 25 27 VGS(th) VDS=VGS, IDS=250uA 1.5 1.8 IGSS VDS=0V,VGS=±20V ±100 nA IDSS VDS=24V, VGS=0V 1 uA V 2.4 VGS=10V, ID=40A 4.8 6.0 VGS=4.5V, ID=20A 6.0 9.0 gfs VDS=5V,ID=5A 7.3 Diode Forward Voltage VSD IS=10A, VGS=0V 0.86 Turn-On Delay Time td(on) 18 Turn-Off Delay Time td(off) VGS=10V, IDS=1A, VDS=15V, RGEN=6Ω, RL=15Ω Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Coss Drain-Source On-Resistance RDS(ON) Forward Transconductance mΩ S 1 V nS 61 2650 VGS=0V, VDS=15V, f=1MHz Crss 910 pF 774 Note: 1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°C, the current rating is based on the DC （<10s）test conditions. 2. Repetitive rating, pulse width limited by junction temperature. 300us Pulse Drain Current Tested. 3. Current limited by bond wire. VER 1.2 2 ACE1613B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics (N-Channel) VER 1.2 3 ACE1613B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 4 ACE1613B N-Channel Enhancement Mode MOSFET Packing Information TO-252 Units: mm VER 1.2 5 ACE1613B N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6