ACE4908A(VER1.1)

ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Description
The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
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P-Channel
-20V/1.0A,RDS (ON)= [email protected]=-4.5V
-20V/0.8A,RDS (ON)= [email protected]=-2.5V
-20V/0.7A,RDS (ON)= [email protected]=-1.8V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
APPLICATIONS
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•
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
VER 1.1
1
ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-20
V
VGSS
±12
V
Gate-Source Voltage
O
Continuous Drain Current(TJ=150℃)
TA=25 C
ID
O
TA=70 C
Pulse Drain Current
-3
IS
-0.6
O
TA=25 C
O
TA=70 C
Operating and Storage Temperature Range
Thermal Resistance-Junction to Ambient
T ≤ 10sec
Steady State
PD
A
-0.7
IDM
Continuous Source Current(Diode Conduction)
Power Dissipation
-1.0
A
0.35
W
0.19
O
TJ,TSTG -55 to 150
RθJA
360
O
400
C
C/W
Packaging Type
SOT-363(SC-70-6)
P- channel
P- channel
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
Ordering information
ACE4908A EM + H
Halogen - free
Pb - free
EM : SOT363
VER 1.1
2
ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-20
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
-0.35
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-State Resistance
RDS(ON)
V
-0.8
V
VDS=0V ,VGS=±12V
±100
nA
VDS=-20V, VGS=0V
-1
VDS=-20V,VGS=0V,TJ=55℃
-5
VDS≤ -4.5V,VGS =-5V
-2
uA
A
VGS=-4.5V, ID=-1.0A
0.42
0.52
VGS=-2.5V, ID=-0.8A
0.58
0.70
VGS=-1.8V, ID=-0.5A
0.75
0.95
Forward Transconductance
gFS
VDS=-10V, ID=-1.0A
1.5
Diode Forward Voltage
VSD
IS=-0.5A ,VGS=0V
-0.8
-1.2
1.5
2.0
Ω
S
V
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn- Off Rise Time
tf
VDS=-10V, VGS=-4.5V,
ID=-0.88A
VGNE=-4.5V, VDD=-10V,
RL=20Ω, RG=6Ω, ID=-0.5A
0.3
nC
0.2
18
30
25
40
15
45
12
20
ns
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
145
VDS=-10V, VGS=0V,f=1MHz
25
pF
10
Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment
with T A=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.1
3
ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.1
4
ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.1
5
ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Packing Information
SOT363(SC-70-6)
VER 1.1
6
ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7