ACE5212A (VER1.1)

ACE5212A
N-Channel Enhancement Mode MOSFET
Description
The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
•
•
•
•
•
20V/0.65A, RDS(ON)[email protected]=4.5V
20V/0.55A,RDS(ON)[email protected]=2.5V
20V/0.45A, RDS(ON) [email protected]=1.8V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
Application
•
•
•
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
VER 1.1
1
ACE5212A
N-Channel Enhancement Mode MOSFET
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
TA=25℃
Continuous Drain Current (TJ=150℃)
TA=80℃
ID
0.65
0.45
A
Pulsed Drain Current
IDM
1.0
A
Continuous Source Current (Diode Conduction)
IS
0.3
A
TA=25℃
Power Dissipation
TA=70℃
Operating Junction Temperature
Storage Temperature Range
PD
TJ
TSTG
0.27
0.16
W
-55/150
O
C
-55/150
O
C
Packaging Type
SOT-523
3
SOT-323 Description
1
2
1
Gate
2
Source
3
Drain
Ordering information
ACE5212A KM + H
Halogen - free
Pb - free
KM : SOT-523
VER 1.1
2
ACE5212A
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS=0V, ID=250uA
20
VGS(th)
VDS=VGS, ID=250uA
0.35
IGSS
VDS=0V,VGS=±12V
100
VDS=20V, VGS=0V
1
VDS=20V, VGS=0V TJ=55℃
5
IDSS
VDS≧4.5V, VGS=5V
V
1
0.7
0.26
0.38
VGS=2.5V, ID=0.55A
0.32
0.45
VGS=1.8V, ID=0.45A
0.42
0.80
Gfs
VDS=10V,ID=0.4A
1.0
VSD
IS=0.15A, VGS=0V
0.8
1.2
1.2
1.5
RDS(ON)
Forward Transconductance
Diode Forward Voltage
uA
A
VGS=4.5V, ID=0.65A
Drain-Source
On-Resistance
nA
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.3
td(on)
5
10
8
15
10
18
1.2
2.8
Turn-On Time
Turn-Off Time
tr
td(off)
tf
VDS=10V, VGS=4.5V, ID=0.6A
VDD=10V, RL=10Ω, VGEN=4.5V,
ID=0.5A ,RG=6Ω
0.2
nC
VER 1.1
nS
3
ACE5212A
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Output Characteristics
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
ID-Drain Current (A)
Gate Charge
Qg-Total Gate Charge (nC)
Transfer Characteristics
VGS-Gate-to-Source Voltage (V)
Capacitance
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
TJ-Junction Temperature (℃)
VER 1.1
4
ACE5212A
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Source-Drain Diode Forward Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
VGS-Gate-to-Source Voltage (V)
Single Pulse Power (Jumction-to-Ambient)
TJ-Temperature(℃)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.1
5
ACE5212A
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-523
VER 1.1
6
ACE5212A
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7