AP4563GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
S1
G1
S2
P-CH
G2
TO-252-4L
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
BVDSS
40V
RDS(ON)
30mΩ
ID
BVDSS
RDS(ON)
ID
8A
-40V
36mΩ
-7.3A
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
Units
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
+20
+20
V
ID@TC=25℃
Continuous Drain Current
ID@TA=25℃
ID@TA=70℃
30
-27
A
Continuous Drain Current
3
8.0
-7.3
A
Continuous Drain Current
3
6.3
-5.9
A
40
-40
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
3.13
W
Linear Derating Factor
0.025
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-case
3
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
3.2
℃/W
3
℃/W
40
℃/W
1
201110243
AP4563GH-HF
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.04
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
-
30
mΩ
VGS=4.5V, ID=5A
-
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70 C) VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=8A
-
13
20.8
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
8
-
ns
tr
Rise Time
ID=1A
-
5.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=20Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
960
1760
pF
Coss
Output Capacitance
VDS=25V
-
105
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.7
Ω
Min.
Typ.
IS=2.4A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
2
AP4563GH-HF
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-7A
-
-
36
mΩ
VGS=-4.5V, ID=-5A
-
-
48
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
19
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=70 C) VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-7A
-
18
30
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
10
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
46
-
ns
tf
Fall Time
RD=20Ω
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
1360 2500
pF
Coss
Output Capacitance
VDS=-25V
-
155
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
7
13
Ω
Min.
Typ.
IS=-2.4A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-7A, VGS=0V
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4563GH-HF
N-Channel
80
80
T A =150 o C
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
T A = 25 o C
60
5.0V
40
4.5V
10V
7.0V
60
5.0V
40
4.5V
20
20
V G =3.0V
V G =3.0V
0
0
0
2
4
6
8
10
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Output Characteristics
80
1.8
ID=5A
I D =8A
V G =10V
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
60
40
1.4
-6.3
-5
1.0
20
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
1.5
Normalized VGS(th) (V)
10
IS(A)
8
T j =150 o C
6
T j =25 o C
4
1.1
0.7
2
0.3
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4563GH-HF
N-Channel
f=1.0MHz
10
1600
8
1200
C (pF)
VGS , Gate to Source Voltage (V)
ID=8A
V DS = 32 V
6
C iss
800
4
400
2
0
C oss
C rss
0
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
10
100us
1ms
10ms
100ms
1s
1
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4563GH-HF
P-Channel
80
80
-10V
-7.0V
60
-5.0V
-4.5V
40
20
-10V
-7.0V
o
T A =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A = 25 o C
60
-5.0V
40
-4.5V
20
V G = - 3.0V
V G = - 3.0V
0
0
0
2
4
6
8
10
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I D = -7 A
V G = - 10V
I D = -5 A
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
80
60
1.4
1.0
40
0.6
20
2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
12
Normalized -VGS(th) (V)
10
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.1
0.7
2
0
0.3
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4563GH-HF
P-Channel
f=1.0MHz
2000
I D = -7A
V DS = -32V
8
1600
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
1200
4
800
2
400
C oss
C rss
0
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
1s
0
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
0.01
Rthja=75℃/W
Single Pulse
0.01
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7