A-POWER AP6910GSM-HF

AP6910GSM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Low On-resistance
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
CH-1
S1/D2
S1/D2
S1/D2
G1
▼ Fast Switching Characteristic
▼ Surface Mount Package
S2
G2
D1
▼ RoHS Compliant & Halogen-Free
SO-8
CH-2
D1
Description
BVDSS
30V
RDS(ON)
15.8mΩ
ID
9A
BVDSS
30V
RDS(ON)
15.8mΩ
ID
9A
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
Absolute Maximum Ratings
Symbol
S1/D2
Parameter
Rating
CH-1
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
Continuous Drain Current
3
[email protected]=70℃
Continuous Drain Current
3
IDM
Pulsed Drain Current1
[email protected]=25℃
Total Power Dissipation
TSTG
TJ
Units
CH2
30
30
V
+20
+20
V
9
9
A
7.2
7.2
A
40
40
A
2.0
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
200912282
AP6910GSM-HF
o
CH-1 Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=9A
-
-
15.8
mΩ
VGS=4.5V, ID=6A
-
-
23
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=9A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=9A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.4
-
nC
Qgd
2
Gate-Drain ("Miller") Charge
2
VGS=4.5V
-
3.4
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=9A
-
30
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=1.7Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
400
640
pF
Coss
Output Capacitance
VDS=25V
-
135
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5.3
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Min.
Typ.
IS=1A, VGS=0V
Test Conditions
-
-
Max. Units
1
V
trr
Reverse Recovery Time
IS=9A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
2
AP6910GSM-HF
o
CH-2 Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=9A
-
-
15.8
mΩ
VGS=4.5V, ID=6A
-
-
25.2
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=9A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=9A
-
6
9.6
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.4
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=9A
-
28
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=1.7Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
430
700
pF
Coss
Output Capacitance
VDS=25V
-
325
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
4.5
Ω
Min.
Typ.
IS=1A, VGS=0V
-
-
0.6
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=9A, VGS=0V
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6910GSM-HF
Channel-1
50
50
o
T A =25 C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
10V
7.0V
6.0V
5.0V
T A =150 o C
10V
7.0V
6.0V
5.0V
V G =4.0V
30
20
10
V G =4.0V
30
20
10
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
20
ID=9A
V G =10V
ID=6A
o
T A =25 C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
18
16
1.2
1.0
14
0.8
12
0.6
2
4
6
8
10
-50
V GS ,Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
Normalized VGS(th) (V)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.5
1
0.5
2
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6910GSM-HF
Channel-1
10
f=1.0MHz
800
600
V DS = 15 V
C (pF)
VGS , Gate to Source Voltage (V)
ID=9A
8
6
C iss
400
4
200
2
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
1ms
10ms
1
100ms
1s
0.1
10s
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP6910GSM-HF
Channel-2
50
50
o
T A =25 C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
V G = 4.0V
30
10V
7.0V
6.0V
5.0V
o
T A = 150 C
10V
7.0V
6.0V
5.0V
20
10
V G = 4.0V
30
20
10
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
20
ID=6A
I D =9A
V G =10V
T A =25 o C
18
Normalized RDS(ON)
RDS(ON) (mΩ)
1.4
16
14
1.2
1.0
12
0.8
10
0.6
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
10
T j =150 o C
ID , Drain Current (A)
IS(A)
V DS =5V
T j =25 o C
1
T j =25 o C
30
T j =150 o C
20
10
0
0.1
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
1
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 6. Transfer Characteristics
Reverse Diode
6
AP6910GSM-HF
Channel-2
f=1.0MHz
10
1000
800
V DS = 15 V
C (pF)
VGS , Gate to Source Voltage (V)
ID=9A
8
6
600
C iss
4
400
2
200
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7