AP4503GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low On-resistance
RDS(ON)
D1
D1
28mΩ
ID
▼ Fast Switching Performance
G2
S1
6.9A
P-CH BVDSS
S2
SO-8
30V
G1
Description
-30V
RDS(ON)
36mΩ
ID
-6.3A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D2
D1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
3
6.9
-6.3
A
3
5.5
-5
A
30
-30
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201010083
AP4503GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Min.
Typ. Max. Units
30
-
-
V
-
0.005
-
V/℃
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
42
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
5.7
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=6A
-
9
15
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
970
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
Parameter
2
VSD
Forward On Voltage
IS
Continuous Source Current ( Body Diode )
2
Test Conditions
Min.
Typ. Max. Units
IS=6A, VGS=0V
-
-
1.2
V
VD=VG=0V , VS=1.2V
-
-
1.7
A
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
2
AP4503GM
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient
RDS(ON)
Min.
Typ.
-30
-
-
V
Reference to 25℃,ID=-1mA
-
-0.004
-
V/℃
VGS=-10V, ID=-6A
-
-
36
mΩ
VGS=-4.5V, ID=-4A
-
-
55
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
5.8
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-6A
-
9
24
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
42
-
ns
tf
Fall Time
RD=15Ω
-
34
-
ns
Ciss
Input Capacitance
VGS=0V
-
960
1540
pF
Coss
Output Capacitance
VDS=-25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Min.
Typ.
IS=-6A, VGS=0V
-
-
-1.2
V
VD=VG=0V , VS=-1.2V
-
-
-1.7
A
Source-Drain Diode
Symbol
Parameter
2
VSD
Forward On Voltage
IS
Continuous Source Current ( Body Diode )
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4503GM
N-Channel
100
70
o
T A =25 C
10V
10V
T A =150 o C
60
ID , Drain Current (A)
ID , Drain Current (A)
80
7.0V
60
40
5.0V
4.5V
7.0V
50
40
5.0V
4.5V
30
20
20
V G =3.0V
V G =3.0V
10
0
0
0
1
2
3
4
5
6
7
0
1
V DS , Drain-to-Source Voltage (V)
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
42
I D =6A
I D =6A
V G =10V
T A =25 o C
38
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
2
34
30
26
22
1.4
1.2
-6.3
-5
1.0
0.8
18
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
Fig 3. On-Resistance v.s. Gate Voltage
150
o
T j ,Junction Temperature (
C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
7
6
1.5
VGS(th) (V)
IS(A)
5
4
3
1
T j =25 o C
T j =150 o C
2
0.5
1
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4503GM
N-Channel
f=1.0MHz
10000
I D =6A
V DS =24V
10
8
1000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
10
0
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
RDS(ON)
ID (A)
10
100us
1ms
1
10ms
100ms
1s
10s
DC
0.1
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
Dity factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
t
-6.3
-5
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135o C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4503GM
P-Channel
100
70
o
-10V
T A =25 C
T A =150 o C
60
-10V
-ID , Drain Current (A)
-ID , Drain Current (A)
80
-7.0V
60
-5.0V
-4.5V
40
-7.0V
50
40
30
-5.0V
-4.5V
20
20
V G =-3.0V
10
V G =-3.0V
0
0
0
1
2
3
4
5
6
7
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.6
I D = -6 A
I D =-6A
V G =10V
T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
50
40
1.2
1.0
-6.3
-5
30
0.8
0.6
20
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
7
2.5
6
5
-VGS(th) (V)
-IS(A)
2
4
3
T j =150 o C
T j =25 o C
1.5
2
1
0
1
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4503GM
P-Channel
10
I D =-6A
V DS =-24V
8
1000
6
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
C oss
C rss
4
100
2
0
10
0.0
5.0
10.0
15.0
20.0
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
Operation in this area
limited by RDS(ON)
-ID (A)
10
1ms
10ms
1
100ms
1s
10s
DC
0.1
T A =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
0.01
-6.3
-5
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7