A-POWER AP6950GYT-HF

AP6950GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Dual N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
▼ Simple Drive Requirement
▼ Easy for Synchronous Buck
CH-1
G1
Converter Application
▼ RoHS Compliant & Halogen-Free
D2/S1
CH-2
G2
Description
S2
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low onresistance and cost-effectiveness.
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
BVDSS
30V
RDS(ON)
18mΩ
ID
BVDSS
RDS(ON)
ID
21A
30V
10.5mΩ
39A
G2
S2
S2
S2
G2 S2 S2 S2
S1/D2
D1
G1 D1 D1 D1
G1
D1
D1
D1
®
PMPAK 3 x 3
Absolute Maximum Ratings
Symbol
Parameter
Units
Rating
CH-1
CH-2
VDS
Drain-Source Voltage
30
30
V
VGS
Gate-Source Voltage
+20
+12
V
[email protected]=25℃
Continuous Drain Current (Chip Limited)
[email protected]=25℃
[email protected]=70℃
IDM
21
39
A
Continuous Drain Current
3
8.3
11.8
A
Continuous Drain Current
3
6.6
9.5
A
40
40
A
1.9
2.2
W
Pulsed Drain Current
1
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rating
Parameter
CH-1
CH-2
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
10
5
℃/W
Rthj-a
3
Maximum Thermal Resistance, Junction-ambient
65
55
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient4
180
145
℃/W
Data & specifications subject to change without notice
1
201204125
AP6950GYT-HF
o
CH-1 Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
14
18
mΩ
VGS=4.5V, ID=5A
-
23.2
30
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=8A
-
4.2
6.7
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.9
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6.5
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
15
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=15V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
IS=8A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
13
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
2
AP6950GYT-HF
o
CH-2 Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=11A
-
8
10.5
mΩ
VGS=4.5V, ID=7A
-
13.3
16.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
V
gfs
Forward Transconductance
VDS=10V, ID=11A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=11A
-
7.5
12
nC
Qgs
Gate-Source Charge
VDS=15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
20
-
ns
tf
Fall Time
VGS=10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
970
1550
pF
Coss
Output Capacitance
VDS=15V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
IS=11A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=11A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec.
4.Surface mounted on min. copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6950GYT-HF
Channel-1
40
40
10V
7.0V
6.0V
5.0V
V G = 4.0V
30
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
20
10
30
20
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
30
I D =8A
V G =10V
I D =5A
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
26
22
18
1.6
1.2
0.8
14
0.4
10
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =250uA
1.6
Normalized VGS(th)
IS(A)
6
T j =25 o C
T j =150 o C
4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6950GYT-HF
Channel-1
10
500
8
C iss
400
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
600
I D =8A
V DS =15V
6
300
4
200
2
100
C oss
C rss
0
0
0
2
4
6
1
8
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor = 0.5
Normalized Thermal Response (Rthja)
Operation in this
area limited by
RDS(ON)
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=180 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
ID , Drain Current (A)
V DS =5V
VG
30
QG
4.5V
20
QGS
QGD
10
T j =150 o C
o
T j =25 C
Charge
o
T j =-40 C
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP6950GYT-HF
Channel-2
60
60
10V
7.0V
6.0V
5.0V
V G =4.0V
ID , Drain Current (A)
50
40
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
50
ID , Drain Current (A)
T A =25 o C
30
20
10
40
30
20
10
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
18
I D =11A
V G =10V
I D =7A
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
16
14
12
1.6
1.2
0.8
10
0.4
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
I D =250uA
10
Normalized VGS(th)
1.6
IS(A)
8
T j =25 o C
T j =150 o C
6
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP6950GYT-HF
Channel-2
10
1000
8
C iss
800
6
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
I D =11A
V DS =15V
600
4
400
2
200
C oss
C rss
0
0
0
4
8
12
1
16
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=145 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
VG
V DS =5V
ID , Drain Current (A)
50
QG
40
4.5V
30
QGS
QGD
20
T j =150 o C
10
T j =25 o C
Charge
o
T j =-40 C
0
0
1
2
3
4
5
Q
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7