A-POWER AP4501AGEM-HF

AP4501AGEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low On-resistance
RDS(ON)
D1
D1
▼ Fast Switching Performance
30V
20mΩ
ID
▼ RoHS Compliant & Halogen-Free
SO-8
S1
8A
P-CH BVDSS
G2
S2
G1
Description
-30V
RDS(ON)
60mΩ
ID
-4.6A
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
D2
G2
1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Total Power Dissipation
TSTG
TJ
-30
V
+20
V
8.0
-4.6
A
3
6.3
-3.7
A
20
-20
A
1
[email protected]=25℃
30
+20
Continuous Drain Current
Pulsed Drain Current
P-channel
3
Continuous Drain Current
IDM
Units
2
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201205081
AP4501AGEM-HF
N-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=8A
-
-
20
mΩ
VGS=4.5V, ID=4A
-
-
28
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=8A
-
7
11.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
7
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
1280
pF
Coss
Output Capacitance
VDS=15V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
12
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
2
AP4501AGEM-HF
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-4A
-
-
60
mΩ
VGS=-5V, ID=-2A
-
-
150
mΩ
-1.7
-
-3
V
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-4A
-
6.5
10.4
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
9
-
ns
tr
Rise Time
ID=-1A
-
5.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
19
-
ns
tf
Fall Time
VGS=-10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=-15V
-
105
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Rg
Gate Resistance
f=1.0MHz
-
12
24
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4501AGEM-HF
N-Channel
40
40
ID , Drain Current (A)
30
20
10
30
20
10
0
0
0
1
2
3
0
4
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
1.8
I D =8A
V G =10V
I D = 5A
o
Normalized RDS(ON)
T A = 25 C
24
RDS(ON0 (mΩ)
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
T A =25 C
20
1.4
1.0
16
30
12
-30
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =250uA
1.6
T j =25 o C
o
T j =150 C
IS(A)
Normalized VGS(th)
6
4
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4501AGEM-HF
N-Channel
f=1.0MHz
1200
ID=8A
V DS = 15 V
1000
8
800
C iss
6
C (pF)
VGS , Gate to Source Voltage (V)
10
600
4
400
2
200
C oss
C rss
0
0
0
3
6
9
12
1
15
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
1
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
30
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
-30
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
10
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
8
20
10
T j =150 o C
o
T j =25 C
6
4
2
o
T j =-40 C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
5
AP4501AGEM-HF
P-Channel
30
30
-ID , Drain Current (A)
20
V G = - 4.0V
10
-10V
-7.0V
-6.0V
o
T A = 150 C
-ID , Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
o
T A =25 C
0
-5.0V
20
V G = - 4.0V
10
0
0
1
2
3
4
5
6
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
90
I D = -4 A
V G = - 10V
I D = -2 A
T A =25 o C
80
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
70
60
1.2
0.8
50
30
-30
0.4
40
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D = -250uA
1.6
Normalized -VGS(th)
-IS(A)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4501AGEM-HF
P-Channel
f=1.0MHz
10
1000
8
800
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -4A
V DS = -15V
6
600
C iss
4
400
2
200
C oss
C rss
0
0
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Operation in this area
limited by RDS(ON)
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
30
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
-30
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
6
V DS = -5V
5
-ID , Drain Current (A)
-ID , Drain Current (A)
16
12
8
T j =150 o C
o
T j =25 C
4
4
3
2
1
o
T j = -40 C
0
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
7
8
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
7