A-POWER AP4537GYT-HF

AP4537GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BVDSS
D1/D2
▼ Simple Drive Requirement
▼ Good Thermal Performance
RDS(ON)
▼ Fast Switching Performance
ID
▼ RoHS Compliant & Halogen-Free S1G1
S2
G2
®
PMPAK 3x3
Description
30V
30mΩ
7.3A
P-CH BVDSS
-30V
RDS(ON)
60mΩ
ID
-5.3A
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
D1
The PMPAK® 3x3 package is smaller size and lower 1.0mm profile
with backside heat sink.
D2
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
30
-30
V
+20
+20
V
Continuous Drain Current
3
7.3
-5.3
A
Continuous Drain Current
3
5.8
-4.2
A
28
-20
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
2.5
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
10
℃/W
50
℃/W
1
201009212
AP4537GYT-HF
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=4A
-
-
30
mΩ
VGS=4.5V, ID=3A
-
-
48
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
8.5
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge 2
ID=4A
-
4.5
7.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
250
400
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=4A, VGS=0V
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
2
AP4537GYT-HF
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
Max.
Unit
-30
-
-
V
VGS=-10V, ID=-4A
-
-
60
mΩ
VGS=-4.5V, ID=-3A
-
-
80
mΩ
VGS=0V, ID=-250uA
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-4A
-
7
11.2
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.5
-
nC
VDS=-15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=-10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
910
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
Max.
Unit
IS=-1.2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 90oC at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4537GYT-HF
N-Channel
40
40
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
30
V G = 4.0V
20
30
20
V G = 4.0V
10
10
0
0
0
2
4
6
0
8
1
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
1.8
50
ID=3A
I D =4A
V G =10V
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
40
1.4
1.0
30
20
0.6
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
1.2
Normalized VGS(th) (V)
1.6
T j =25 o C
o
T j =150 C
100
o
8
4
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
IS(A)
10V
7.0V
6.0V
5.0V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4537GYT-HF
N-Channel
f=1.0MHz
500
ID=4A
V DS = 15 V
400
6
C (pF)
VGS , Gate to Source Voltage (V)
8
300
C iss
4
200
2
100
C oss
C rss
0
0
0
2
4
6
1
8
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
Operation in this area
limited by RDS(ON)
ID (A)
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
1
Duty factor=0.5
0.2
0.1
PDM
0.1
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 90℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4537GYT-HF
P-Channel
40
40
T A = 150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
30
20
V G = -3.0V
10
-5.0V
30
-4.5V
20
V G = -3.0V
10
0
0
0
2
4
6
8
10
0
2
-V DS , Drain-to-Source Voltage (V)
6
8
10
Fig 2. Typical Output Characteristics
2.0
80
I D = -4 A
V G = -10 V
ID=-3A
T A =25 o C
1.6
Normalized RDS(ON)
70
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
1.2
0.8
50
0.4
40
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
Normalized -VGS(th) (V)
10
T j =150 o C
0
o
Fig 3. On-Resistance v.s. Gate Voltage
-IS(A)
-10V
-7.0V
o
-10V
-7.0V
-5.0V
-4.5V
o
T A = 25 C
T j =25 o C
6
4
1.0
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4537GYT-HF
P-Channel
8
I D = -4A
V DS = -15V
C iss
500
6
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
600
4
400
300
200
2
C oss
C rss
100
0
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
Operation in this
area limited by
RDS(ON)
1ms
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 90℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7