AP2530AGY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
▼ Low Gate Charge
N-CH BVDSS
S1
▼ Fast Switching Performance
RDS(ON)
D1
▼ Surface Mount Package
72mΩ
ID
G2
▼ RoHS Compliant & Halogen-Free SOT-26
30V
S2
3.3A
P-CH BVDSS
G1
-30V
RDS(ON)
150mΩ
ID
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
-2.3A
D2
D1
The SOT-26 package is widely used for commercial surface mount
applications.
G1
G2
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
Continuous Drain Current
3
3.3
-2.3
A
Continuous Drain Current
3
2.7
-1.8
A
12
-10
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
1.136
W
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
110
℃/W
1
201101171
AP2530AGY-HF
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=3A
-
-
72
mΩ
VGS=4.5V, ID=2A
-
-
135
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=3A
-
4.6
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge 2
ID=3A
-
2.8
4.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.4
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
5.5
-
ns
tr
Rise Time
ID=1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
10
-
ns
tf
Fall Time
VGS=10V
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
200
320
pF
Coss
Output Capacitance
VDS=15V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
-
Ω
Min.
Typ.
IS=0.9A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3A, VGS=0V
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
2
AP2530AGY-HF
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
Max.
Unit
-30
-
-
V
VGS=-10V, ID=-2A
-
-
150
mΩ
VGS=-4.5V, ID=-1A
-
-
280
mΩ
VGS=0V, ID=-250uA
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
2.9
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-2A
-
2.5
4
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.2
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
5.5
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=-10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
160
260
pF
Coss
Output Capacitance
VDS=-15V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
-
Ω
Min.
Typ.
IS=0.9A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=2A, VGS=0V
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2530AGY-HF
N-Channel
12
10
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
10
8
8
V G = 4.0V
6
10V
7.0V
6.0V
5.0V
T A = 150 o C
ID , Drain Current (A)
o
T A =25 C
4
6
3.3A
V G = 4.0V
4
2
2
0
0
0
1
2
3
4
5
0
6
1
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
5
6
Fig 2. Typical Output Characteristics
1.8
110
ID=2A
I D =3A
V G =10V
T A =25 o C
Normalized RDS(ON)
100
RDS(ON) (mΩ)
3
V DS , Drain-to-Source Voltage (V)
90
80
1.4
3.3
2.68
13.2
1.0
70
60
50
1.136
0.6
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
I D =1mA
Normalized VGS(th) (V)
1.6
IS(A)
3
T j =25 o C
o
T j =150 C
2
1.2
0.8
1
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2530AGY-HF
N-Channel
f=1.0MHz
300
ID=3A
V DS = 15 V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
200
4
100
C oss
C rss
2
0
0
0
1
2
3
4
1
5
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 180℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP2530AGY-HF
P-Channel
8
10
-10V
-7.0V
-6.0V
-5.0V
-ID , Drain Current (A)
8
-10V
-7.0V
-6.0V
-5.0V
o
T A = 150 C
-ID , Drain Current (A)
o
T A = 25 C
6
V G = - 4.0 V
4
6
V G = -4.0V
4
2
2
0
0
0
1
2
3
4
5
0
6
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
220
I D = -2 A
V G = -10 V
ID=-1A
T A =25 o C
200
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
180
160
140
1.2
0.8
120
0.4
100
2
4
6
8
-50
10
0
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.0
2.0
I D = -1mA
T j =150 o C
T j =25 o C
-IS(A)
2.0
Normalized -VGS(th) (V)
1.6
1.0
1.2
0.8
0.4
0.0
0.0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP2530AGY-HF
P-Channel
10
f=1.0MHz
320
8
240
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -2A
V DS = -15V
6
160
C iss
4
80
C oss
C rss
2
0
0
0
1
2
3
4
5
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
-ID (A)
10
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.01
PDM
t
0.2
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 180℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7