A-POWER AP2530GY-HF

AP2530GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
N-CH BVDSS
D2
S1
▼ Low On-resistance
RDS(ON)
D1
▼ Surface Mount Package
72mΩ
ID
G2
▼ RoHS Compliant & Halogen-Free SOT-26
30V
S2
3.3A
P-CH BVDSS
G1
-30V
RDS(ON)
Description
150mΩ
ID
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
-2.3A
D2
D1
The SOT-26 package is widely used for commercial-industrial
applications.
G1
G2
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
Continuous Drain Current
3
[email protected]=70℃
Continuous Drain Current
3
1
Units
P-channel
30
-30
V
+20
+20
V
3.3
-2.3
A
2.6
-1.8
A
10
-10
A
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
1.14
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
110
℃/W
1
201003263
AP2530GY-HF
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=3A
-
-
72
mΩ
VGS=4.5V, ID=2A
-
-
125
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=3A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70oC) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=3A
-
3
5
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11
-
ns
tf
Fall Time
RD=15Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
270
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.5
0.8
Ω
Min.
Typ.
IS=0.9A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3A, VGS=0V
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
2
AP2530GY-HF
o
P-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-30
-
-
V
-
0.03
-
V/℃
VGS=-10V, ID=-2A
-
-
150
mΩ
VGS=-4.5V, ID=-1A
-
-
280
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=70 C) VDS=-24V ,VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-2A
-
3
5
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-25V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
6
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
17
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
150
240
pF
Coss
Output Capacitance
VDS=-25V
-
50
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Gate Resistance
f=1.0MHz
-
8
12
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
2
Min.
Typ.
Max.
Unit
IS=-0.9A, VGS=0V
Test Conditions
-
-
-1.3
V
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2530GY-HF
N-Channel
10
10
T A =25 o C
6
4
10 V
7.0 V
5.0 V
4.5 V
8
ID , Drain Current (A)
8
ID , Drain Current (A)
T A = 150 o C
10 V
7.0 V
5.0 V
4.5 V
V G = 3.0 V
6
4
V G = 3.0 V
2
2
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
170
I D =3A
V G =10V
130
Normalized RDS(ON)
RDS(ON) (mΩ )
ID=2A
T A =25 o C
90
50
1.4
1.0
0.6
2
4
6
8
10
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
3
IS(A)
2
T j =150 o C
T j =25 o C
1
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2530GY-HF
N-Channel
f=1.0MHz
1000
ID=3A
V DS = 25 V
9
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
100
C oss
C rss
3
10
0
0
1
2
3
4
1
5
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 180℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
6
T j =150 o C
QG
4.5V
4
QGS
QGD
2
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP2530GY-HF
P-Channel
10
10
T A = 150 C
8
-ID , Drain Current (A)
-ID , Drain Current (A)
8
-4.5 V
6
4
V G = - 3.0 V
2
- 5.0 V
6
- 4.5 V
4
V G = - 3.0 V
2
0
0
0
2
4
6
0
2
-V DS , Drain-to-Source Voltage (V)
6
Fig 2. Typical Output Characteristics
1.5
400
I D = -2 A
V G = -10 V
I D = -1 A
o
Normalized RDS(ON)
T A =25 C
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
300
200
1.2
0.9
0.6
100
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.5
1.2
Normalized -VGS(th) (V)
2.0
1.0
T j =150 o C
0
o
Fig 3. On-Resistance v.s. Gate Voltage
-IS(A)
- 10 V
- 7.0 V
o
- 10 V
- 7.0 V
- 5.0 V
o
T A = 25 C
T j =25 o C
0.5
1.0
0.8
0.6
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP2530GY-HF
P-Channel
f=1.0MHz
1000
I D =-2A
V DS =-25V
9
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C iss
100
C oss
C rss
3
10
0
0
1
2
3
4
1
5
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
-ID (A)
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.01
t
0.2
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 180℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
6
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
T j =150 o C
QG
4
4.5V
QGS
QGD
2
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7