AP4575GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D1/D2
▼ Good Thermal Performance
RDS(ON)
▼ Fast Switching Performance
ID
▼ RoHS Compliant & Halogen-Free
60V
36mΩ
6.6A
P-CH BVDSS
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
-60V
RDS(ON)
75mΩ
ID
-4.7A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
60
-60
V
+20
+20
V
Continuous Drain Current
3
6.6
-4.7
A
Continuous Drain Current
3
5.3
-3.8
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
3.13
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
6
℃/W
40
℃/W
1
201012171
AP4575GH-HF
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
VGS=10V, ID=6A
-
-
36
mΩ
VGS=4.5V, ID=4A
-
-
42
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
12.5
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
12
19.2
nC
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
2
2
VGS=0V, ID=250uA
Max. Units
2
td(on)
Turn-on Delay Time
VDS=30V
-
7
-
ns
tr
Rise Time
ID=5A
-
10.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
975
1560
pF
Coss
Output Capacitance
VDS=25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Min.
Typ.
IS=2.4A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
22
-
nC
2
AP4575GH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-60
-
-
V
VGS=-10V, ID=-4A
-
-
75
mΩ
VGS=-4.5V, ID=-3A
-
-
90
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=-48V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-3A
-
14
22.4
nC
2
VGS=0V, ID=-250uA
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8
-
nC
2
td(on)
Turn-on Delay Time
VDS=-30V
-
9
-
ns
tr
Rise Time
ID=-3A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
42
-
ns
tf
Fall Time
VGS=-10V
-
28
-
ns
Ciss
Input Capacitance
VGS=0V
-
1000 1600
pF
Coss
Output Capacitance
VDS=-25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Min.
Typ.
IS=-2.4A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
45
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4575GH-HF
N-Channel
50
40
T A = 150 C
ID , Drain Current (A)
40
ID , Drain Current (A)
o
10V
7.0V
6.0V
5.0V
o
T A = 25 C
30
V G = 4.0V
20
10V
7.0V
6.0V
5.0V
V G = 4.0V
30
20
10
10
0
0
0
2
4
6
0
8
2
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
44
2.4
ID=4A
ID=6A
V G =10V
T A =25 o C
40
Normalized RDS(ON)
2.0
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
36
32
28
1.6
1.2
0.8
24
0.4
20
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2
I D =250uA
Normalized VGS(th) (V)
1.6
6
IS(A)
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4575GH-HF
N-Channel
f=1.0MHz
1600
I D =5A
V DS =48V
8
1200
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
800
4
400
2
0
0
0
4
8
12
16
20
24
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
C oss
C rss
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
ID (A)
100us
1ms
10ms
100ms
1
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
Single Pulse
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja=75℃/W
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4575GH-HF
P-Channel
40
30
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
30
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
T A = 150 o C
-ID , Drain Current (A)
o
T A = 25 C
20
20
10
10
0
0
0
2
4
6
8
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
84
2.4
I D = -4A
V G = -10V
I D = -3 A
o
T A =25 C
80
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
76
72
1.6
1.2
68
0.8
64
0.4
60
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
I D = -250uA
1.6
4
T j =150 o C
Normalized -VGS(th) (V)
-IS(A)
6
T j =25 o C
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4575GH-HF
P-Channel
f=1.0MHz
1600
8
I D = -3 A
V DS = -48 V
1200
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
800
4
400
2
C oss
C rss
0
0
0
8
16
24
1
32
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
Operation in this area
limited by RDS(ON)
100us
1ms
10ms
100ms
1
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja=75℃/W
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7