A-POWER AP2533GY-HF

AP2533GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
▼ Low Gate Charge
N-CH BVDSS
S1
▼ Fast Switching Performance
RDS(ON)
D1
▼ Surface Mount Package
150mΩ
ID
G2
▼ RoHS Compliant & Halogen-Free SOT-26
16V
S2
2.2A
P-CH BVDSS
G1
-16V
RDS(ON)
320mΩ
ID
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
-1.5A
D2
D1
The SOT-26 package is widely used for commercial surface mount
applications.
G1
G2
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
16
-16
V
+8
+8
V
Continuous Drain Current
3
2.2
-1.5
A
Continuous Drain Current
3
1.8
-1.2
A
8.0
-6.0
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
TJ
1.14
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
110
℃/W
1
201008171
AP2533GY-HF
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
16
-
-
V
VGS=4.5V, ID=2A
-
-
150
mΩ
VGS=2.5V, ID=1.5A
-
-
230
mΩ
VGS=1.8V, ID=0.5A
-
-
450
mΩ
0.2
-
1
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=2A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=12V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
ID=2A
-
6.5
10.4
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=1A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=5V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
350
560
pF
Coss
Output Capacitance
VDS=16V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=0.9A, VGS=0V
Max. Units
1.2
V
2
AP2533GY-HF
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Min.
Typ.
Max.
Unit
BVDSS
Symbol
Drain-Source Breakdown Voltage
Parameter
VGS=0V, ID=-250uA
Test Conditions
-16
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-1.5A
-
-
320
mΩ
VGS=-2.5V, ID=-1A
-
-
550
mΩ
VGS=-1.8V, ID=-0.5A
-
-
900
mΩ
-0.2
-
-1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-1A
-
3.6
-
S
IDSS
Drain-Source Leakage Current
VDS=-12V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
ID=-2A
-
5.5
8.8
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-10V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.5
-
nC
VDS=-10V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=-5V
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
410
660
pF
Coss
Output Capacitance
VDS=-16V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
Max.
Unit
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-0.9A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2533GY-HF
N-Channel
12
12
5.0V
4.5V
3.5V
2.5V
V G = 2.0V
ID , Drain Current (A)
10
8
10
6
4
8
6
4
2
2
0
0
0
1
2
3
0
4
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
90
I D = 1.5 A
I D =2A
V G =4.5V
Normalized RDS(ON)
T A =25 o C
80
RDS(ON) (mΩ)
5.0V
4.5V
3.5V
2.5V
V G = 2.0V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
70
1.4
1.0
60
50
0.6
0
2
4
6
-50
8
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
4
Normalized VGS(th) (V)
I D =-1mA
IS(A)
3
T j =25 o C
o
T j =150 C
2
1.2
0.8
0.4
1
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2533GY-HF
N-Channel
f=1.0MHz
500
ID=2A
V DS = 10 V
400
6
C (pF)
VGS , Gate to Source Voltage (V)
8
C iss
300
4
200
2
100
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
9
13
17
21
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthja)
100us
Operation in this area
limited by RDS(ON)
1ms
1
ID (A)
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 180℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP2533GY-HF
P-Channel
8
8
T A = 150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
6
4
2
6
V G = -2.0V
4
2
0
0
0
1
2
3
4
5
6
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.5
220
I D = -1.5 A
V G = -4.5 V
ID=-1A
T A =25 o C
Normalized RDS(ON)
200
RDS(ON) (mΩ)
-5.0V
-4.5V
-3.5V
-2.5V
o
-5.0V
-4.5V
-3.5V
-2.5V
V G = - 2.0 V
o
T A = 25 C
180
160
140
1.2
0.9
120
100
0.6
0
2
4
6
-50
8
0
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4.0
1.4
I D =-1mA
1.2
-IS(A)
T j =150 o C
Normalized -VGS(th) (V)
3.0
T j =25 o C
2.0
1.0
1.0
0.8
0.6
0.4
0.0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP2533GY-HF
P-Channel
8
I D = -1A
V DS = -10V
500
6
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
600
4
400
300
200
2
100
C oss
C rss
0
0
0
2
4
6
8
1
10
5
Q G , Total Gate Charge (nC)
9
13
17
21
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
Duty factor=0.5
Normalized Thermal Response (R thja)
Operation in this area
limited by RDS(ON)
-ID (A)
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.01
PDM
t
0.2
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 180℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7